STP11NM60AFP ST Microelectronics, Inc., STP11NM60AFP Datasheet - Page 3

• Manufacturer Part Number: STP11NM60AFP
• Description: N-channel 600V 0.4 Ohm 11A TO-220/TO-220FP/I2PAK Mdmesh Power MOSFET
• Manufacturer: ST Microelectronics, Inc.

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
C
Symbol
Symbol
Symbol
Symbol
I
oss eq.
V
SDM
g
t
t
I
C
SD
C
r(Voff)
C
d(on)
Q
Q
fs
RRM
I
2. Pulse width limited by safe operating area.
3. C
R
Q
Q
SD
t
t
oss
t
t
rss
iss
rr
gs
gd
c
r
G
f
(1)
rr
g
(1)
V
(2)
DSS
oss eq.
(3)
.
is defined as a constant equivalent capacitance giving the same charging time as C
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Equivalent Output
Capacitance
Gate Input Resistance
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Off-voltage Rise Time
Fall Time
Cross-over Time
Parameter
Parameter
Parameter
Parameter
V
V
f=1 MHz Gate DC Bias = 0
Test Signal Level = 20mV
Open Drain
V
R
(Resistive Load see, Figure 3)
V
V
I
I
V
(see test circuit, Figure 5)
V
R
(Inductive Load see, Figure 5)
V
SD
SD
DS
GS
DD
DD
GS
DD
G
DD
G
DS
= 4.7
= 4.7
= 11 A, V
= 11 A, di/dt = 100A/µs
= 15 V
= 0V, V
= 300 V, I
= 480V, I
= 10V
= 100V, T
= 480V, I
= 25V, f = 1 MHz, V
STP11NM60A/STP11NM60AFP/STB11NM60A-1
Test Conditions
Test Conditions
Test Conditions
Test Conditions
,
V
V
DS
I
GS
D
GS
GS
D
D
D
j
= 5.5 A
= 0V to 480V
= 150°C
= 11 A,
= 11 A,
= 10 V
= 5.5 A
= 0
= 10V
GS
= 0
Min.
Min.
Min.
Min.
oss
when V
1211
Typ.
Typ.
Typ.
Typ.
20.5
248
560
116
1.9
5.7
10
21
14
15
35
14
39
10
20
9
DS
increases from 0 to 80%
Max.
Max.
Max.
Max.
1.5
49
11
44
Unit
Unit
Unit
Unit
nC
nC
nC
µC
pF
pF
pF
pF
ns
ns
ns
ns
ns
ns
S
A
A
V
A
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