STP3NA100 ST Microelectronics, STP3NA100 Datasheet - Page 2

• Manufacturer Part Number: STP3NA100
• Description: N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
• Manufacturer: ST Microelectronics

STP3NA100/FI
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (T
OFF
ON ( )
DYNAMIC
2/9
Symbol
Symbol
V
Symbol
Symbol
R
R
R
R
V
g
(BR)DSS
I
thj-case
thc-sink
I
C
thj-amb
I
C
E
DS(on)
C
GS(th)
D(on)
fs
I
DSS
GSS
T
AR
oss
AS
rss
iss
( )
l
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Maximum Lead Temperature For Soldering Purpose
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
(starting T
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold
Voltage
Static Drain-source On
Resistance
On State Drain Current V
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Parameter
Parameter
Parameter
j
DS
= 25
= 0)
o
GS
C, I
= 0)
D
= I
j
I
V
V
V
V
V
V
V
V
AR
Parameter
max,
D
DS
DS
GS
DS
GS
DS
GS
DS
DS
= 250 A
, V
= V
= 10 V
= 25 V
= Max Rating
= Max Rating
=
= 10V I
> I
> I
case
DD
D(on)
D(on)
GS
< 1%)
= 50 V)
30 V
= 25
Test Conditions
Test Conditions
Test Conditions
x R
x R
I
D
D
f = 1 MHz
V
o
= 250 A
= 1.5 A
DS(on)max
DS(on)max
C unless otherwise specified)
GS
= 0
Max
Max
Typ
T
V
c
I
GS
D
= 125
= 1.5 A
= 0
TO-220
o
C
1.14
1000
Min.
Min.
Min.
2.25
3.5
1.5
62.5
300
Max Value
0.5
ISOWATT220
1100
Typ.
Typ.
Typ.
170
4.3
3.5
85
20
3
3
2.78
Max.
Max.
Max.
1430
3.75
250
110
25
30
100
5
Unit
Unit
Unit
o
o
o
Unit
nA
pF
pF
pF
C/W
C/W
C/W
mJ
o
V
V
A
S
A
A
A
C