STP3NA100 ST Microelectronics, STP3NA100 Datasheet - Page 3

• Manufacturer Part Number: STP3NA100
• Description: N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
• Manufacturer: ST Microelectronics

ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
( ) Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
( ) Pulse width limited by safe operating area
Safe Operating Area for TO-220
Symbol
Symbol
Symbol
V
I
t
SDM
t
I
r(Voff)
SD
Q
Q
d(on)
I
Q
RRM
Q
t
SD
t
t
t
rr
gd
c
r
gs
f
rr
g
( )
( )
Turn-on Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Off-voltage Rise Time
Fall Time
Cross-over Time
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
Parameter
Parameter
Parameter
V
R
V
V
R
(see test circuit, figure 5)
I
I
V
(see circuit, figure 5)
SD
SD
DD
DD
DD
DD
G
G
= 4.7
= 47
= 3.5 A
= 3.5 A
= 500 V
= 800 V
= 800 V
= 100 V
Test Conditions
Test Conditions
Test Conditions
V
V
di/dt = 100 A/ s
GS
I
I
I
GS
D
V
D
D
T
= 10 V
GS
j
= 1.7 A
= 3.5 A
= 3.5 A V
= 0
= 150
Safe Operating Area for TO-220FP
= 10 V
o
C
GS
= 10 V
Min.
Min.
Min.
1000
Typ.
Typ.
Typ.
20
27
48
23
62
22
95
15
35
8
STP3NA100/FI
Max.
Max.
Max.
125
3.5
1.6
27
35
65
85
30
14
Unit
Unit
Unit
nC
nC
nC
ns
ns
ns
ns
ns
ns
A
A
V
A
C
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