HS2-2620RH-Q Intersil Corporation, HS2-2620RH-Q Datasheet - Page 5

• Manufacturer Part Number: HS2-2620RH-Q
• Description: Radiation Hardened/ Very Wideband/ High Input Impedance Uncompensated Operational Amplifiers
• Manufacturer: Intersil Corporation

Die Characteristics
DIE DIMENSIONS:
INTERFACE MATERIALS:
Glassivation:
Top Metallization:
Substrate:
Backside Finish:
Metallization Mask Layout
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
69 mils x 66 mils x 19 mils 1 mil
1750 m x 1420 m x 483 m 25.4 m
Type: Nitride (S13N4) over Silox (SiO2, 5% Phos.)
Silox Thickness: 12k
Nitride Thickness: 3.5k
Type: Al, 1% Cu
Thickness: 18k
Linear Bipolar, DI
Silicon
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Å
BAL
+IN
-IN
2k
Å
Å
Å
2k
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
Å
1.5k
5
Å
HS-2620RH, HS-2622RH
HS-2620RH, HS-2622RH
V-
COMP
ASSEMBLY RELATED INFORMATION:
Substrate Potential (Powered Up):
ADDITIONAL INFORMATION:
Worst Case Current Density:
Transistor Count:
Unbiased
<2 x 10
HS-2620RH: 140
HS-2622RH: 140
5
A/cm
2
V+
OUT
BAL