STG3P3M25K120 ST Microelectronics, STG3P3M25K120 Datasheet - Page 3

• Manufacturer Part Number: STG3P3M25K120
• Description: IGBT Modules
• Manufacturer: ST Microelectronics

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STG3P3M25K120
1
Electrical ratings
Table 2.
1. Calculated according to the iterative formula
2. V
3. Pulse width limited by max. junction temperature
Table 3.
1. Calculated value with conductive grease applied and maximum mounting torque equal to 2 Nm
Symbol
Symbol
I
V
I
P
I
V
R
I
I
CP
V
CL
T
t
FSM
C
C
scw
clamp
CES
TOT
T
I
ISO
GE
stg
th(j-s)
F
(1)
(1)
(2)
(3)
j
= 80% of V
Collector-emitter voltage (V
Collector current (continuous) at T
Collector current (continuous) at T
Gate-emitter voltage
Turn-off latching current
Pulsed collector current
Diode RMS forward current at T
Surge non repetitive forward current t
sinusoidal
Total dissipation at T
Insulation withstand voltage A.C.
(t=1min/sec; Ts=25°C)
Short circuit withstand time
V
V
Storage temperature
Operating junction temperature
Absolute maximum ratings
Thermal data
CE
GE
Thermal resistance junction-sink
Thermal resistance junction-sink diode
= 0.5 V
= 15 V
CES
, T
I
(BR)CES
j
C
=150 °C, R
(
T
C
)
=
Parameter
, T
s
Doc ID 15914 Rev 1
Parameter
= 25°C
--------------------------------------------------------------------------------------------------------- -
R
G
j
thj c
=10 Ω, V
= 125 °C, R
–
GE
×
:
= 0)
V
s
GE
CE sat
= 25°C
s
s
= 15 V
(1)
(
= 25°C
= 80°C
G
T
p
IGBT
j max
= 10 Ω,
(
= 10 ms
) max
(
)
–
)
(
T
T
C
j max
(
)
,
I
C
(
T
– 40 to 125
– 40 to 150
2500/3000
C
)
Value
1200
)
Value
±20
100
100
100
104
4.5
50
25
30
1.2
1.8
Electrical ratings
°C/W
Unit
Unit
°C
°C
µs
W
V
A
A
V
A
A
A
A
V
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