STG3P3M25K120 ST Microelectronics, STG3P3M25K120 Datasheet - Page 4

• Manufacturer Part Number: STG3P3M25K120
• Description: IGBT Modules
• Manufacturer: ST Microelectronics

www.DataSheet4U.com
Electrical characteristics
2
4/11
Electrical characteristics
(
Table 4.
Table 5.
1. Pulsed: pulse duration= 300 µs, duty cycle 1.5%
Table 6.
T
V
Symbol
Symbol
Symbol
V
(di/dt)
(di/dt)
V
s
(BR)CES
g
= 25 °C unless otherwise specified)
I
CE(sat)
t
t
I
C
GE(th)
C
C
Q
Q
d(on)
d(on)
CES
GES
fs
Q
oes
t
t
ies
res
ge
gc
r
r
g
(1)
on
on
Collector-emitter
breakdown voltage
(V
Collector cut-off Current
(V
Gate-emitter leakage
current (V
Gate threshold voltage
Collector-emitter saturation
voltage
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
Turn-on delay time
Current rise time
Turn-on current slope
Turn-on delay time
Current rise time
Turn-on current slope
GE
GE
IGBT-inverter parameters
Dynamic
Switching on/off
= 0)
= 0)
Parameter
Parameter
Parameter
CE
= 0)
Doc ID 15914 Rev 1
I
V
v
V
V
V
V
C
CE
V
V
V
V
V
Figure 3
CE
GE
CE
GE
GE
V
R
Figure 4
V
R
T
= 1 mA
GE
GE
CE
CE
CE
s
CC
CC
G
G
= 1200 V, T
=125 °C,
= 1200 V
= V
= ±20 V
= 15 V, I
= 15 V, I
= 10 Ω , V
= 10 Ω , V
= 15 V
= 25 V, f = 1 MHz,
= 760 V, I
= 0
= 15 V
= 760 V, I
= 760 V, I
GE
Test conditions
Test conditions
Test conditions
, I
C
C
C
,
= 1 mA
I
Figure 4
= 20 A
= 20 A, T
GE
GE
C
s
= 20 A
C
C
C
= 125°C
= ±15 V,
= ±15 V,
= 20 A,
= 20 A
= 20 A
s
=125 °C
Min.
1200
Min.
Min. Typ. Max.
-
-
4.5
-
-
-
Typ.
STG3P3M25K120
840
760
2520
Typ. Max. Unit
36
22
35
22
170
105
3.1
3.0
20
33
21
56
Max.
±100
3.85
500
6.5
10
-
-
-
-
-
A/µs
A/µs
Unit
Unit
mA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
µA
nA
S
V
V
V
V