IXDF502 IXYS, IXDF502 Datasheet - Page 3

• Manufacturer Part Number: IXDF502
• Description: (IXDx502) 2 Ampere Dual Low-Side Ultrafast MOSFET Drivers
• Manufacturer: IXYS

Parameter
Supply Voltage
All Other Pins
Junction Temperature
Storage Temperature
Lead Temperature (10 Sec)
Unless otherwise noted, 4.5V ≤ V
All voltage measurements with respect to GND. IXD_502 configured as described in Test Conditions. All specifications are for one channel.
Absolute Maximum Ratings
Electrical Characteristics @ T
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol Parameter
V
V
V
I
V
V
R
R
I
I
t
t
t
t
V
I
IN
PEAK
DC
R
F
ONDLY
OFFDLY
CC
IH
IL
IN
OH
OL
CC
OH
OL
High input voltage
Low input voltage
Input voltage range
Input current
High output voltage
Low output voltage
High state output
resistance
Low state output
resistance
Peak output current
Continuous output current
Rise time
Fall time
On-time propagation delay
Off-time propagation delay
Power supply voltage
Power supply current
CC
≤ 30V .
Value
35V
-0.3 V to V
150 ° C
-65 ° C to 150 ° C
300 ° C
(1)
A
= 25
Test Conditions
4.5V ≤ V
4.5V ≤ V
0V ≤ V
V
V
V
C
C
C
C
V
V
V
CC
CC
CC
CC
IN
IN
IN
LOAD
LOAD
LOAD
LOAD
+ 0.3V
= +V
= 3.5V
= 0V
= 15V
o
= 15V
= 15V
C
=1000pF V
=1000pF V
=1000pF V
=1000pF V
IN
(3)
CC
CC
CC
≤ V
≤ 18V
≤ 18V
CC
Operating Ratings
Parameter
Operating Supply Voltage
Operating Temperature Range
Package Thermal Resistance *
8-Pin PDIP
8-Pin SOIC
6-Lead DFN
6-Lead DFN
6-Lead DFN
CC
CC
CC
CC
3
IXDF502 / IXDI502 / IXDN502
=15V
=15V
=15V
=15V
V
CC
(PI)
(SIA)
(D1)
(D1)
(D1)
Min
-10
- 0.025
3.0
4.5
-5
(2)
θ
θ
θ
θ
θ
J-A
J-A
J-A
J-C
J-S
(max) 3.3 ° C/W
(typ) 200 ° C/W
(typ) 125-200 ° C/W
(typ) 7.3 ° C/W
(typ) 125 ° C/W
Typ
2.5
7.5
6.5
25
20
15
2
2
1
0
Value
4.5V to 30V
-55 ° C to 125 ° C
(4)
V
CC
0.025
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Max
0.8
10
10
32
30
30
15
15
4
3
1
9
3
+ 0.3
Units
mA
µA
µA
µA
ns
ns
ns
ns
Ω
Ω
V
V
V
V
V
A
A
V