GB20NB32LZ-1 ST Microelectronics, GB20NB32LZ-1 Datasheet - Page 2

• Manufacturer Part Number: GB20NB32LZ-1
• Description: N-CHANNEL PowerMESH TM IGBT
• Manufacturer: ST Microelectronics

STGB20NB32LZ - STGB20NB32LZ-1
ABSOLUTE MAXIMUM RATINGS
(•)Pulse width limited by safe operating area
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
OFF
ON (1)
2/11
Rthj-case
Rthj-amb
V
Symbol
Symbol
Symbol
BV
BV
V
I
BV
CE(SAT)
V
V
CM
I
I
R
V
E
GE(th)
Eas
P
T
CES
GES
CES
ECR
(ECR)
I
I
(CES)
T
stg
GE
SD
GE
C
C
tot
GE
j
( )
Clamped Voltage
Emitter Collector Break-down
Voltage
Gate Emitter Break-down
Voltage
Collector cut-off Current
(V
Gate-Emitter Leakage
Current (V
Gate Emitter Resistance
Gate Threshold Voltage
Collector-Emitter Saturation
Voltage
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Collector-Emitter Voltage (V
Reverse Battery Protection
Gate-Emitter Voltage
Collector Current (continuous) at T
Collector Current (continuous) at T
Collector Current (pulsed)
Single Pulse Energy T
Total Dissipation at T
Derating Factor
ESD (Human Body Model)
Storage Temperature
Max. Operating Junction Temperature
GE
= 0)
Parameter
Parameter
CE
= 0)
c
c
= 25°C
Parameter
= 25°C
GS
CASE
= 0)
I
I
I
I
I
V
V
V
V
V
V
V
V
V
V
C
C
C
C
G
CE
CE
GE
CE
CE
CE
GE
GE
GE
GE
c
c
= 2 mA, V
= 2 mA, V
= 2 mA, V
= 75 mA, Tc = 25°C
= ± 2 mA
= 25 °C UNLESS OTHERWISE SPECIFIED)
= 25°C
= 100°C
= 15 V, V
=200 V, V
= V
= V
=V
= ± 10V , V
=4.5V, I
=4.5V, I
=4.5V, I
=4.5V, I
GE
GE
GE
Test Conditions
Test Conditions
, I
, I
, I
C
C
C
C
C
GE
GE
GE
C
C
GE
= 250µA, Tc=150°C
= 10 A, Tc= 25°C
= 10 A, Tc= 150°C
= 20 A, Tc= 25°C
= 20 A, Tc= 150°C
GE
= 250µA, Tc=-40°C
= 250µA, Tc= 25°C
= 0, Tc= - 40°C
= 0, Tc= 25°C
= 0, Tc= 150°C
CE
=0 ,T
=0 ,T
= 0
C
C
=150 °C
=150°C
± 400
Min.
Min.
330
325
320
CLAMPED
CLAMPED
–65 to 175
1.2
0.6
20
12
10
1
Value
700
150
175
20
40
30
80
1
4
± 660
62.5
Typ.
Typ.
1.35
1.25
355
350
345
1.4
1.1
28
14
15
1
1
± 1000
Max.
Max.
380
375
370
100
1.8
1.7
16
10
25
2
2
2
W/°C
Unit
°C/W
°C/W
mJ
KV
°C
°C
W
Unit
Unit
V
V
V
A
A
A
K
µA
µA
µA
V
V
V
V
V
V
V
V
V
V
V
V