GB20NB32LZ-1 ST Microelectronics, GB20NB32LZ-1 Datasheet - Page 3

• Manufacturer Part Number: GB20NB32LZ-1
• Description: N-CHANNEL PowerMESH TM IGBT
• Manufacturer: ST Microelectronics

ELECTRICAL CHARACTERISTICS (T
DYNAMIC
FUNCTIONAL CHARACTERISTICS
SWITCHING ON
SWITCHING OFF
(**)Losses Include Also the Tail (jedec Standardization)
Symbol
Symbol
Symbol
Symbol
(di/dt)
E
E
t
t
U.I.S.
t
t
t
r
r
C
C
C
Eon
d(on)
(V
d
off
(V
d
off
g
Q
(
(
oes
II
t
t
t
res
t
t
ies
fs
c
off
c
off
r
f
(**)
f
(**)
g
off
off
on
)
)
)
)
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Gate Charge
Latching Current
Functional Test Open
Secondary Coil
Delay Time
Rise Time
Turn-on Current Slope
Turn-on Switching Losses
Cross-Over Time
Off Voltage Rise Time
Fall Time
Off Voltage Delay Time
Turn-off Switching Loss
Cross-Over Time
Off Voltage Rise Time
Fall Time
Off Voltage Delay Time
Turn-off Switching Loss
Parameter
Parameter
Parameter
Parameter
CASE
V
V
V
R
V
R
L = 1.6mH
V
R
V
R
V
R
V
CE
CE
GE
GE
CC
CC
CC
GOFF
GOFF
G
G
G
CE
=1K , V
=1K , V
= 25 °C UNLESS OTHERWISE SPECIFIED)
= 1K
= 250 V, I
= 250 V, I
R
R
= 25 V
= 280 V, I
= 5 V
= 5 V, T
= 250 V, I
= 25 V, f = 1 MHz, V
V
GE
V
GE
=127
=1K ,Tc=125°C, V
cc
cc
Test Conditions
Test Conditions
Test Conditions
Test Conditions
= 1 K
= 1 K
= 250 V, I
= 250 V, I
, V
GE
GE
Tc = 150 °C
,
C
I
C
GE
C
C
C
C
= 125 °C
= 4.5 V
= 4.5 V, Tc=150°C
V
=20 A
= 20 A
= 20 A, Tc=25°C
= 20 A,
= 20 A
Clamp
= 4.5 V
, V
, V
C
C
GE
GE
= 20 A,
= 20 A,
STGB20NB32LZ - STGB20NB32LZ-1
= 250 V,
= 4.5 V
= 4.5 V
GE
G
= 5 V,
= 0
Min.
Min.
21.6
Min.
Min.
34
2300
Typ.
165
Typ.
Typ.
Typ.
35
28
51
11.5
11.8
17.8
550
2.3
0.6
8.8
9.2
4.8
2.6
7.8
3.5
3.9
12
2
Max.
Max.
Max.
Max.
A/µs
Unit
Unit
Unit
Unit
mJ
mJ
nC
mJ
mJ
pF
pF
pF
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
A
A
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