1SS404 Toshiba Semiconductor, 1SS404 Datasheet
1SS404
Manufacturer Part Number
1SS404
Description
Silicon Epitaxial Schottky Barrier Type
Manufacturer
Toshiba Semiconductor
Datasheet
1.1SS404.pdf
(3 pages)
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Quantity
Price
Part Number:
1SS404
Manufacturer:
SI/VISHVY
Quantity:
20 000
Part Number:
1SS404(TH3DENSO
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Part Number:
1SS404(TH3DENSO,F)
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Quantity:
20 000
Part Number:
1SS404(TPH3
Manufacturer:
TOSHIBA/东芝
Quantity:
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Part Number:
1SS404(TPH3,F)
Manufacturer:
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Quantity:
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High Speed Switching Applications
•
•
•
•
Absolute Maximum Ratings
Marking
Electrical Characteristics
Note 1: Mounted on a glass epoxy board of 20 mm × 20 mm,
Two-pin small packages are suitable for higher mounting densities
Low forward voltage : V
Low reverse current: I
Small total capacitance: C
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Power dissipation
Junction temperature
Storage temperature range
Operating temperature range
Note:
Forward voltage
Reverse current
Total capacitance
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
pad dimension 4 mm × 4 mm.
Characteristics
Characteristics
S 5
R
F (3)
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
= 50 μA (max)
T
= 46 pF (typ.)
= 0.38 V (typ.)
(Ta = 25°C)
(Ta = 25°C)
Symbol
V
T
T
I
V
FM
I
T
Symbol
RM
P
opr
stg
O
V
V
V
R
j
C
F (1)
F (2)
F (3)
I
R
1SS404
T
I
I
I
V
V
−55 ~ 125
−40 ~ 100
F
F
F
200 (Note 1)
R
R
Rating
= 1 mA
= 10 mA
= 300 mA
700
300
125
= 20 V
= 0, f = 1 MHz
25
20
1
Test Condition
Unit
mW
mA
mA
°C
°C
°C
V
V
Equivalent Circuit (top view)
Weight: 0.004 g (typ.)
JEDEC
JEITA
TOSHIBA
USC
Min
⎯
⎯
⎯
⎯
⎯
Typ.
0.16
0.22
0.38
46
⎯
1-1E1A
2007-11-01
―
―
Max
0.45
50
⎯
⎯
⎯
1SS404
Unit: mm
Unit
μA
pF
V
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1SS404 Summary of contents
Page 1
... MHz Unit USC °C °C JEDEC ― °C JEITA ― TOSHIBA 1-1E1A Weight: 0.004 g (typ.) Equivalent Circuit (top view) Min Typ. Max ⎯ 0.16 ⎯ 0.22 ⎯ 0.38 0.45 ⎯ ⎯ ⎯ 46 2007-11-01 1SS404 Unit: mm Unit ⎯ ⎯ V μA 50 ⎯ pF ...
Page 2
... Reverse voltage V ( – 140 Mounted on a glass epoxy circuit board 20mm, 120 pad dimension 4 x 4mm. 100 100 Ambient temperature °C 1SS404 20 24 125 150 2007-11-01 ...
Page 3
... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 3 1SS404 20070701-EN GENERAL 2007-11-01 ...