SMBYT03 STMicroelectronics, SMBYT03 Datasheet

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SMBYT03

Manufacturer Part Number
SMBYT03
Description
FAST RECOVERY RECTIFIER DIODES
Manufacturer
STMicroelectronics
Datasheet

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SMBYT03
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ST
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20 000
Part Number:
SMBYT03-200
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STMicroe
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SMBYT03-300
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SMBYT03-400
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SMBYT03-400
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ST
Quantity:
20 000
Single high voltage rectifier ranging from 200V to
400 V suited for Switch Mode Power Supplies and
other power converters.
DESCRIPTION
FEATURES
ABSOLUTE MAXIMUM RATINGS
THERMAL RESISTANCE
October 1999 - Ed : 2C
VERY LOW REVERSE RECOVERY TIME
VERY LOW SWITCHING LOSSES
LOW NOISE TURN-OFF SWITCHING
SURFACE MOUNT DEVICE
Symbol
Symbol
Symbol
Rth (j-l)
I
V
F(RMS)
I
I
Tstg
F(AV)
FSM
RRM
Tj
RMS forward current
Average forward current
Non repetitive surge peak forward current
Storage and junction temperature range
Repetitive peak reverse voltage
Junction-leads
FAST RECOVERY RECTIFIER DIODES
Parameter
Parameter
Parameter
sinusoidal
tp=10ms
Tl=55 C
= 0.5
SMC
- 40 to + 150
- 40 to + 150
SMBYT03
Value
Value
Value
400
10
60
20
3
Unit
Unit
Unit
C/W
V
A
A
A
C
C
1/5

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SMBYT03 Summary of contents

Page 1

... Storage and junction temperature range Tj Symbol V Repetitive peak reverse voltage RRM THERMAL RESISTANCE Symbol Rth (j-l) Junction-leads October 1999 - FAST RECOVERY RECTIFIER DIODES Parameter Tl= 0.5 tp=10ms sinusoidal Parameter Parameter SMBYT03 SMC Value Unit 150 150 C Value Unit 400 V Value ...

Page 2

... SMBYT03 ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Symbol Test Conditions 100 100 C j Pulse test : * tp = 380 s, duty cycle < ms, duty cycle < RECOVERY CHARACTERISTICS Symbol Test Conditions trr TURN-OFF SWITCHING CHARACTERISTICS (Without serie inductance) ...

Page 3

... Zth(j-c) (tp Rth(j- =0 Tc=25 C Single pulse o Tc=55 C 0.01 0.001 0. Fig.6 : Average current versus ambient temperature. (duty cycle : 0.5) I F(av) (A) 3.5 Rth(j-a)=Rth(j-l) 3.0 2.5 2.0 Rth(j-a)=65 1.5 2 1cm Cu 1.0 0.5 Tamb SMBYT03 =tp =tp/T tp( =0.5 T =tp C 100 120 140 160 3/5 ...

Page 4

... SMBYT03 Fig.7 : Recovery time versus dI /dt. F Fig.9 : Peak reverse current versus dIF/dt. Fig.11 : Dynamic parameters versus junction temperature. 4/5 Fig.8 : Peak forward voltage versus dI Fig.10 : Recovery charge versus dIF/dt. (typical values) Fig.12 : Thermal resistance junction to ambient versus copper surface under each lead. ...

Page 5

... Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. DIMENSIONS REF. Millimeters Min. Max. A1 1.90 2.45 A2 0.05 0.20 b 2.90 3.2 c 0.15 0.41 E 7.75 8.15 E1 6.60 7.15 E2 4.40 4.70 D 5.55 6.25 L 0.75 1.60 b 3.3 http://www.st.com SMBYT03 Inches Min. Max. 0.075 0.096 0.002 0.008 0.114 0.126 0.006 0.016 0.305 0.321 0.260 0.281 0.173 0.185 0.218 0.246 0.030 0.063 5/5 ...

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