SMBYT03 STMicroelectronics, SMBYT03 Datasheet - Page 3
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SMBYT03
Manufacturer Part Number
SMBYT03
Description
FAST RECOVERY RECTIFIER DIODES
Manufacturer
STMicroelectronics
Datasheet
1.SMBYT03.pdf
(5 pages)
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Fig.1 : Low frequency power losses versus
average current.
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Fig.3 : Non repetitive surge peak forward current
versus overload duration.
20
18
16
14
12
10
Fig.5 : Voltage drop versus forward current.
(Maximum values)
3.0
2.7
2.4
2.1
1.8
1.5
1.2
0.9
0.6
0.3
0.0
0.001
8
6
4
2
0
0.01
0.0
P F(av)(W)
I M(A)
V FM(V)
Tl=100 C
0.5
o
0.01
=0.05
1.0
0.1
1.5
I F(av)(A)
=0.1
Tc=40 C
t(s)
0.1
2.0
1
o
I FM(A)
2.5
=0.2
IM
3.0
1
=tp/T
=0.5
10
Tc=25 C
Tc=55 C
3.5
T
t
=0.5
=1
o
o
tp
4.0
10
50
Fig.2 : Peak current versus form factor.
60
50
40
30
20
10
Fig.4 : Relative variation of thermal impedance
junction to lead versus pulse duration.
0.01
Fig.6 : Average current versus ambient
temperature. (duty cycle : 0.5)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
0.1
0.001
0
1
I M(A)
I
F(av) (A)
K
K =
= 0 . 1
= 0 . 2
Single pulse
20
Zth(j-c) (tp. )
P=0.5W
P=1.5W
Rth(j-c)
Rth(j-a)=65
Rth(j-a)=Rth(j-l)
Tamb( C)
40
0.01
1cm Cu
P=2.5W
2
o
60
o
C/W
= 0 .5
80
tp(s)
0.1
100 120 140 160
=0.5
=tp/T
=tp/T
1
SMBYT03
=tp/T
T
T
tp
T
tp
I M
tp
3/5
10