BAS78 Infineon Technologies AG, BAS78 Datasheet - Page 2
BAS78
Manufacturer Part Number
BAS78
Description
Silicon Switching Diodes
Manufacturer
Infineon Technologies AG
Datasheet
1.BAS78.pdf
(3 pages)
Electrical Characteristics at T
Parameter
DC characteristics
Breakdown voltage
I
Forward voltage
I
I
Reverse current
V
Reverse current
V
AC characteristics
Diode capacitance
V
Reverse recovery time
I
measured at I
Test circuit for reverse recovery time
Pulse generator: t
(BR)
F
F
F
R
R
R
= 1 A
= 2 A
= 200 mA, I
= V
= V
= 0 V, f = 1 MHz
= 100 µA
Rmax
Rmax
, T
R
R
A
= 200mA
= 200 mA, R
= 150 °C
F
p
DUT
= 10µs, D = 0.05,
t
r
= 0.6ns, R
Oscillograph
L
= 100
A
i
V
t
R
= 50
= 25°C, unless otherwise specified.
r
10%
90%
t
BAS78A
BAS78B
BAS78C
BAS78D
p
,
t
Oscillograph: R = 50
F
2
t
rr
Symbol
V
V
I
I
C
t
R
R
R
rr
= 20 mA
(BR)
F
D
EHN00020
t
C
min.
100
200
400
50
1pF
-
-
-
-
-
-
, t
r
Values
= 0.35ns,
BAS78A...BAS78D
typ.
10
1
-
-
-
-
-
-
-
-
max.
Aug-20-2001
1.6
50
2
1
-
-
-
-
-
-
Unit
V
µA
pF
µs