MSS40_1 ST Microelectronics, Inc., MSS40_1 Datasheet - Page 2

• Manufacturer Part Number: MSS40_1
• Description: Thyristormodule
• Manufacturer: ST Microelectronics, Inc.

THERMAL RESISTANCES
(4) With contact grease utilisation
GATE CHARACTERISTICS (maximum values)
P GM = 50 W (tp = 20 s)
ELECTRICAL CHARACTERISTICS
MSS40
* For higher guaranteed values, please consult us.
Note : MSS40-1400
2/6
Rth (c-h)
Symbol
dV/dt *
Symbol
Rth (j-c)
I DRM
I RRM
V GD
V GT
V TM
I GT
tgt
I H
I L
tq
- I
- dV/dt at Tj = 125 C is defined at 67% of 1200 V
DRM
and I
Junction to case
Contact (case to heatsink) (4)
V D =12V
V D =12V
V D =V DRM R L =3.3k
V D =V DRM
dI G /dt = 3A/ s
I G =1.2 I GT
I T = 0.5A gate open
I TM = 80A tp= 380 s
V DRM Rated
V RRM Rated
I T = 80A V R =75V V D =67%V DRM
dI/dt=30A/ s dV/dt=20V/ s Gate open
Linear slope up to V D =67%V DRM
gate open
RRM
at Tj = 125 C is defined at 1200 V
(DC) R L =33
(DC) R L =33
I G = 500mA
P G (AV) = 1 W
Test Conditions
Parameter
I FGM = 4 A (tp = 20 s) V RGM = 5V.
Tj=125 C
Tj=125 C
Tj=125 C
Tj=125 C
Tj=25 C
Tj=25 C
Tj=25 C
Tj=25 C
Tj=25 C
Tj=25 C
Tj=25 C
DC
AC
MAX
MAX
MAX
MAX
MAX
MAX
MAX
MIN
TYP
TYP
TYP
TYP
MIN
Value
Value
0.05
0.05
120
100
500
0.6
1.5
0.2
1.7
50
60
40
80
10
1
2
Unit
Unit
V/ s
C/W
C/W
mA
mA
mA
mA
V
V
V
s
s