DL47B3A-B02B Samsung Electronics, DL47B3A-B02B Datasheet - Page 3
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DL47B3A-B02B
Manufacturer Part Number
DL47B3A-B02B
Description
2.5 Gbps 1550 nm Direct Modulation DFB Laser Module
Manufacturer
Samsung Electronics
Datasheet
1.DL47B3A-B02B.pdf
(15 pages)
Module Performance Characteristics
DL47B3A-B/D (2mW) condition : T
Electrical characteristics
Threshold current
Operating current
Operating voltage
Input impedance
Monitor dark current
Monitor reverse bias
voltage
Monitor current
TEC current
TEC voltage
TEC capacity
TEC resistance
Cooler power
Thermistor resistance
Thermistor
Optical characteristics
Slope efficiency
Optical output power
Threshold power
Spectral width
Side mode suppression
ratio
Relative intensity noise
Peak wavelength
Wavelength stability
with case temperature
Wavelength tuning
coefficient
Full width at -3 dB
Full width at -20 dB
Parameter
constant
Symbol
SMSR
RIN
V
C
V
R
I
R
P
C
I
R
V
P
P
I
I
I
OP
TH
BM
OP
D
M
C
TR
T
c
C
C
C
F
TH
s
T
T
LD
op
C
=25
o
C, BOL, unless otherwise specified
T
T
T
T
Test Conditions
T
L
L
L
L
CW, P
CW, P
CW, P
=25
=25
=25
=25
CW, P
CW, P
T
L
=25
C
0.5~3 GHz
I
V
F
=-20~75
V
T
T
=I
BMPD
o
o
o
o
RPD
L
C
C, T
C, T
C, T
C, T
CW
CW
=25
o
TH
CW
=75
(1)
(1)
C to 85
F
F
F
F
F
=2 mW
=2 mW
, CW
=5 V
=2 mW,
=2 mW
=2 mW
=5 V
o
C
C
C
C
o
C
C
=75
=75
=75
=75
o
C
o
C
o
o
o
o
C
C
C
C
1528
0.06
3917
Min
30
0.1
9.5
-1
50
2
3
3969
1.05
0.11
0.30
0.09
Typ
700
0.5
1.7
1.0
0.1
31
25
10
37
11
5
1000
3981
1610
-145
Max
10.5
100
100
1.8
2.5
3.5
2.5
0.2
0.5
+1
25
65
10
1
mW/mA
pm/
dB/Hz
nm/
Unit
mW
mA
mA
mA
mA
nm
nm
nm
k
nA
dB
o
W
V
V
V
K
W
C
o
o
C
C
3