DL47B3A-B02B Samsung Electronics, DL47B3A-B02B Datasheet - Page 4
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DL47B3A-B02B
Manufacturer Part Number
DL47B3A-B02B
Description
2.5 Gbps 1550 nm Direct Modulation DFB Laser Module
Manufacturer
Samsung Electronics
Datasheet
1.DL47B3A-B02B.pdf
(15 pages)
Laser operating
temperature
Tracking error
Rise time (10%-90%)
Fall time (10%-90%)
Cutoff frequency
RF return loss
Optical isolation
Dispersion performance
Dispersion penalty
DL47B3C-B (10mW) Condition : T
Electrical characteristics
Threshold current
Operating current
Operating voltage
Input impedance
Monitor dark current
Monitor reverse bias
voltage
Monitor current
TEC current
TEC voltage
TEC capacity
TEC resistance
Cooler power
Thermistor resistance
Thermistor
Optical characteristics
(1) 2.5 Gbps NRZ, 2
(2) ACC, [P
Parameter
F
(25 C)-P
constant
23
F
-1 PRBS, P
(75 C)]/P
F
Symbol
(25 C)
V
TR
V
R
S
DP
I
T
F
AVE
I
R
R
T
T
I
V
P
I
SO
I
I
OP
TH
BM
OP
D
M
C
11
TR
R
C
T
L
F
C
C
C
S
= 1mW, ER = 10dB, BER=10
op
=25
o
C, BOL, unless otherwise specified
T
T
T
T
f=50 MHz~5 GHz
T
L
L
L
L
CW, P
T
CW, P
CW, P
D=1800 ps/nm,
=25
=25
=25
=25
Test Conditions
L
C
=25
3000 ps/nm
=-20 to 75
V
P
V
T
T
BMPD
F
RPD
o
o
o
o
L
C
=2 mW
C, T
C, T
C, T
C, T
=25
o
CW
=75
(1),
F
(2)
(1)
(1)
F
F
C to 85
=10 mW,
=10 mW
=10 mW
=5 V
=5 V
C
C
o
C
C
o
C
=75
=75
=75
=75
C
o
C
o
C
o
o
o
o
C
C
C
C
-10
3917
3.5
Min
0.1
9.5
20
25
50
3
3
3969
1.05
700
0.5
1.7
1.0
Typ
70
25
10
11
5
1000
3981
10.5
+10
150
150
100
2.5
3.5
2.5
1.8
Max
35
25
90
10
2
1
psec
psec
GHz
Unit
mA
mA
mA
mA
k
dB
dB
dB
nA
o
o
W
%
V
V
V
K
C
C
4