SI9933BDY-E3 Vishay Siliconix, SI9933BDY-E3 Datasheet - Page 3

• Manufacturer Part Number: SI9933BDY-E3
• Description: Dual P-Channel 2.5-V (G-S) MOSFET
• Manufacturer: Vishay Siliconix

Document Number: 72748
S-40237—Rev. A, 16-Feb-04
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.20
0.16
0.12
0.08
0.04
0.00
30
10
5
4
3
2
1
0
1
0.0
0
0
V
GS
V
I
D
DS
Source-Drain Diode Forward Voltage
1
0.2
= 2.5 V
= 4.7 A
On-Resistance vs. Drain Current
= 10 V
4
V
SD
2
Q
0.4
g
− Source-to-Drain Voltage (V)
I
− Total Gate Charge (nC)
D
T
− Drain Current (A)
3
Gate Charge
J
8
= 150_C
0.6
4
0.8
12
5
V
1.0
GS
T
J
6
= 25_C
= 4.5 V
16
1.2
7
1.4
20
8
New Product
1000
0.20
0.16
0.12
0.08
0.04
0.00
800
600
400
200
1.6
1.4
1.2
1.0
0.8
0.6
0
−50
0
0
On-Resistance vs. Gate-to-Source Voltage
C
On-Resistance vs. Junction Temperature
V
I
−25
rss
D
GS
= 4.7 A
I
= 10 V
D
1
4
= 1 A
T
V
V
0
J
GS
DS
− Junction Temperature (_C)
C
− Gate-to-Source Voltage (V)
− Drain-to-Source Voltage (V)
oss
25
Capacitance
2
8
Vishay Siliconix
C
50
iss
I
12
D
3
Si9933BDY
75
= 4.7 A
100
16
www.vishay.com
4
125
150
20
5
3