SI9933BDY-E3 Vishay Siliconix, SI9933BDY-E3 Datasheet - Page 4

• Manufacturer Part Number: SI9933BDY-E3
• Description: Dual P-Channel 2.5-V (G-S) MOSFET
• Manufacturer: Vishay Siliconix

Si9933BDY
Vishay Siliconix
www.vishay.com
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
4
−0.2
−0.4
0.6
0.4
0.2
0.0
0.01
0.1
−50
2
1
10
−4
−25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0
T
Threshold Voltage
J
− Temperature (_C)
25
10
I
D
−3
= 250 mA
Single Pulse
50
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.01
100
10
0.1
100
10
1
−2
0.1
125
Limited
r
I
DS(on)
D(on)
Single Pulse
T
Square Wave Pulse Duration (sec)
A
150
V
= 25_C
DS
New Product
Limited
− Drain-to-Source Voltage (V)
Safe Operating Area
10
1
−1
BV
DSS
Limited
10
1
I
DM
50
40
30
20
10
0
10
Limited
−2
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
dc
100
10
10
−1
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
Single Pulse Power
JM
− T
t
A
Time (sec)
1
1
= P
t
2
DM
Z
thJA
thJA
100
S-40237—Rev. A, 16-Feb-04
t
t
1
2
(t)
Document Number: 72748
= 90_C/W
10
100
600
600