BFR520T Philips Semiconductors (Acquired by NXP), BFR520T Datasheet - Page 3

• Manufacturer Part Number: BFR520T
• Description: BFR520T; NPN 9 GHZ Wideband Transistor;; Package: SOT416 (EMT3, SMPAK)
• Manufacturer: Philips Semiconductors (Acquired by NXP)

Philips Semiconductors
THERMAL CHARACTERISTICS
CHARACTERISTICS
T
Notes
1. G
2. I
2000 Apr 03
R
I
h
C
C
C
f
G
F
P
ITO
j
CBO
T
SYMBOL
SYMBOL
s
FE
L1
th j-s
= 25 C unless otherwise specified.
e
c
re
NPN 9 GHz wideband transistor
UM
21
f
C
(2p q)
G
UM
2
= 20 mA; V
UM
is the maximum unilateral power gain, assuming s
= 898 MHz and at f
=
10 log
thermal resistance from junction to soldering point
collector cut-off current
DC current gain
emitter capacitance
collector capacitance
feedback capacitance
transition frequency
maximum unilateral power
gain; note 1
insertion power gain
noise figure
output power at 1 dB gain
compression
third order intercept point
CE
------------------------------------------------------- - dB
= 6 V; R
1
PARAMETER
–
s
11
L
s
2
(2q p)
21
= 50 ; f = 900 MHz; T
1
2
–
= 904 MHz.
s
22
2
PARAMETER
I
I
I
I
I
I
T
I
T
I
T
I
T
f = 900 MHz; T
f = 900 MHz; T
f = 2 GHz; T
I
f = 900 MHz; T
note 2
E
C
C
E
C
C
C
C
C
C
amb
amb
amb
amb
s
s
s
= 0; V
= i
= 20 mA; V
= i
= 0; V
= 20 mA; V
= 20 mA; V
= 20 mA; V
= 20 mA; V
= 20 mA; V
=
=
=
e
c
= 25 C
= 25 C
= 25 C
= 25 C
opt
opt
opt
= 0; V
= 0; V
amb
CE
CB
; I
; I
; I
C
C
C
= 25 C; f
= 6 V
= 6 V; f = 1 MHz
3
12
= 5 mA; V
= 20 mA; V
= 5 mA; V
amb
EB
CB
CONDITIONS
CE
CE
CE
CE
CE
CE
is zero and
amb
amb
amb
= 0.5 V; f = 1 MHz
= 6 V; f = 1 MHz
= 25 C
= 6 V
= 6 V; f = 1 GHz;
= 6 V; f = 900 MHz;
= 6 V; f = 2 GHz;
= 6 V; f = 900 MHz;
= 6 V; R
= 25 C
= 25 C
= 25 C
p
= 900 MHz; f
CE
CE
CE
L
= 6 V;
= 6 V;
= 6 V;
= 50 ;
q
= 902 MHz; measured at
60
13
MIN.
VALUE
500
120
1
0.5
0.4
9
15
9
14
1.1
1.6
1.9
17
26
TYP.
Product specification
BFR520T
50
250
1.6
2.1
MAX. UNIT
UNIT
K/W
nA
pF
pF
pF
GHz
dB
dB
dB
dB
dB
dB
dBm
dBm