BFR520T Philips Semiconductors (Acquired by NXP), BFR520T Datasheet - Page 5

• Manufacturer Part Number: BFR520T
• Description: BFR520T; NPN 9 GHZ Wideband Transistor;; Package: SOT416 (EMT3, SMPAK)
• Manufacturer: Philips Semiconductors (Acquired by NXP)

Philips Semiconductors
2000 Apr 03
handbook, halfpage
handbook, halfpage
NPN 9 GHz wideband transistor
G UM
V
G
MSG = maximum stable gain.
G
Fig.6
I
G
MSG = maximum stable gain.
G
Fig.8
(dB)
C
CE
UM
max
UM
max
= 5 mA; V
gain
(dB)
= 6 V; f = 900 MHz; T
= maximum unilateral power gain.
= maximum unilateral power gain.
50
40
30
20
10
= maximum available gain.
= maximum available gain.
20
18
16
14
12
10
10
0
0
Maximum unilateral power gain as a
function of collector current; typical values.
2
Gain as a function of frequency;
typical values.
CE
= 6 V; T
10
amb
10
MSG
G UM
amb
1
= 25 C.
= 25 C.
20
I C (mA)
1
G max
f (GHz)
V
CE
30
= 6 V
MRC027
MRC024
3 V
10
5
handbook, halfpage
handbook, halfpage
V
G
MSG = maximum stable gain.
G
Fig.7
I
G
MSG = maximum stable gain.
G
Fig.9
gain
(dB)
C
CE
UM
max
UM
max
gain
= 20 mA; V
(dB)
= 6 V; f = 2 GHz; T
= maximum unilateral power gain.
= maximum unilateral power gain.
25
20
15
10
50
40
30
20
10
= maximum available gain.
= maximum available gain.
10
5
0
0
0
Gain as a function of collector current;
typical values.
2
Gain as a function of frequency;
typical values.
CE
= 6 V; T
MSG
10
amb
10
amb
G UM
= 25 C.
1
= 25 C.
20
I C (mA)
1
Product specification
G max
f (GHz)
BFR520T
30
MRC025
MRC026
G max
G UM
MSG
10