BFR92 Philips Semiconductors (Acquired by NXP), BFR92 Datasheet - Page 2

• Manufacturer Part Number: BFR92
• Description: BFR92; NPN 5 GHZ Wideband Transistor;; Package: SOT23 (SST3)
• Manufacturer: Philips Semiconductors (Acquired by NXP)

Philips Semiconductors
DESCRIPTION
NPN transistor in a plastic SOT23
envelope primarily intended for use in
RF wideband amplifiers and
oscillators. The transistor features
low intermodulation distortion and
high power gain; due to its very high
transition frequency, it also has
excellent wideband properties and
low noise up to high frequencies.
PNP complement is BFT92.
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
Note
1. T
September 1995
V
V
I
P
f
C
G
F
V
V
V
V
I
P
T
T
C
T
C
SYMBOL
SYMBOL
stg
j
CBO
CEO
tot
o
CBO
CEO
EBO
tot
re
NPN 5 GHz wideband transistor
UM
s
is the temperature at the soldering point of the collector tab.
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
transition frequency
feedback capacitance
maximum unilateral power gain
noise figure
output voltage
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
PARAMETER
PARAMETER
PINNING
PIN
1
2
3
base
emitter
collector
Code: P1p
open emitter
open base
up to T
I
T
I
I
T
I
T
d
R
f
open emitter
open base
open collector
up to T
C
C
C
C
(p q r)
DESCRIPTION
im
j
amb
amb
L
= 14 mA; V
= 25 C
= 2 mA; V
= 14 mA; V
= 2 mA; V
= 75 ; T
= 60 dB; I
= 25 C
= 25 C; Z
2
= 493.25 MHz
s
s
= 95 C; note 1
= 95 C; note 1
CONDITIONS
CONDITIONS
CE
CE
amb
CE
CE
C
= 10 V; f = 1 MHz
= 10 V; f = 500 MHz;
s
= 14 mA; V
= 25 C;
= 10 V; f = 500 MHz;
= 10 V; f = 500 MHz;
= opt.
fpage
CE
= 10 V;
Top view
1
Fig.1 SOT23.
5
0.4
18
2.4
150
MIN.
TYP.
65
Product specification
20
15
2
25
300
150
175
3
20
15
25
300
MAX.
MAX.
MSB003
BFR92
2
V
V
mA
mW
GHz
pF
dB
dB
mV
V
V
V
mA
mW
C
C
UNIT
UNIT