BFR92 Philips Semiconductors (Acquired by NXP), BFR92 Datasheet - Page 3

• Manufacturer Part Number: BFR92
• Description: BFR92; NPN 5 GHZ Wideband Transistor;; Package: SOT23 (SST3)
• Manufacturer: Philips Semiconductors (Acquired by NXP)

Philips Semiconductors
THERMAL RESISTANCE
Note
1. T
CHARACTERISTICS
T
Notes
1. G
2. Crystal mounted in a SOT37 envelope (BFR90).
3. d
September 1995
R
I
h
f
C
C
C
G
F
V
SYMBOL
j
CBO
T
FE
SYMBOL
o
th j-s
= 25 C unless otherwise specified.
c
e
re
NPN 5 GHz wideband transistor
UM
V
V
V
measured at f
im
s
p
q
r
UM
= V
is the temperature at the soldering point of the collector tab.
= V
= V
= 60 dB (DIN 45004B); I
is the maximum unilateral power gain, assuming S
o
o
o
at d
collector cut-off current
DC current gain
transition frequency
collector capacitance
emitter capacitance
feedback capacitance
maximum unilateral power gain
(note 1)
noise figure (see Fig.2 and note 2) I
output voltage
6 dB; f
6 dB; f
thermal resistance from junction to
soldering point
im
(p q r
= 60 dB; f
r
q
= 505.25 MHz;
= 503.25 MHz;
PARAMETER
) = 493.25 MHz.
PARAMETER
p
= 495.25 MHz;
C
= 14 mA; V
CE
I
I
I
I
I
I
T
I
f = 500 MHz; T
T
note 3
E
C
C
E
C
C
C
C
= 10 V; R
amb
amb
= 0; V
= i
= 14 mA; V
= 14 mA; V
= i
= 2 mA; V
= 14 mA; V
= 2 mA; V
up to T
e
c
= 25 C
= 25 C; Z
= 0; V
= 0; V
CB
L
3
12
= 10 V
s
= 75 ; T
CONDITIONS
CB
EB
CE
CE
= 95 C; note 1
is zero and
CE
CE
CE
amb
= 10 V; f = 1 MHz
= 0.5 V; f = 1 MHz
= 10 V; f = 1 MHz;
= 10 V; f = 500 MHz;
CONDITIONS
s
= 10 V
= 10 V; f = 500 MHz
= 10 V;
= opt.
= 25 C
amb
= 25 C;
G
UM
=
10 log
------------------------------------------------------------- - dB ˙
40
MIN.
1
THERMAL RESISTANCE
–
S
11
90
5
0.75
0.8
0.4
18
2.4
150
TYP. MAX.
Product specification
S
2
21
260 K/W
1
2
50
–
BFR92
S
22
2
nA
GHz
pF
pF
pF
dB
dB
mV
UNIT