BFR93 Philips Semiconductors (Acquired by NXP), BFR93 Datasheet - Page 2

• Manufacturer Part Number: BFR93
• Description: BFR93; NPN 5 GHZ Wideband Transistor;; Package: SOT23 (SST3)
• Manufacturer: Philips Semiconductors (Acquired by NXP)

Philips Semiconductors
FEATURES
APPLICATIONS
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. T
1997 Oct 29
V
V
I
P
C
f
G
F
d
V
V
V
I
P
T
T
SYMBOL
SYMBOL
C
T
C
im
stg
j
Very low intermodulation distortion
High power gain
Excellent wideband properties and
low noise up to high frequencies
due to its very high transition
frequency.
RF wideband amplifiers and
oscillators.
CBO
CEO
tot
CBO
CEO
EBO
tot
re
NPN 5 GHz wideband transistor
UM
s
is the temperature at the soldering point of the collector pin.
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
feedback capacitance
transition frequency
maximum unilateral power gain
noise figure
intermodulation distortion
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
PARAMETER
PARAMETER
DESCRIPTION
NPN wideband transistor in a plastic
SOT23 package.
PNP complement: BFT93.
PINNING
PIN
1
2
3
open emitter
open base
T
I
I
T
I
T
I
T
I
V
T
open emitter
open base
open collector
T
C
C
C
C
C
s
j
amb
amb
amb
s
O
= 25 C
= 2 mA; V
= 30 mA; V
= 30 mA; V
= 2 mA; V
= 30 mA; V
= 300 mV; f
95 C
95 C; note 1
base
emitter
collector
= 25 C
= 25 C
= 25 C
DESCRIPTION
2
CE
CE
CONDITIONS
CONDITIONS
CE
CE
CE
p
= 5 V; f = 1 MHz
= 5 V; f = 500 MHz;
+ f
= 5 V; f = 500 MHz;
= 5 V; f = 500 MHz;
= 5 V; R
q
f
r
= 493.25 MHz;
L
= 75 ;
page
Marking code: R1p.
0.8
5
16.5
1.9
60
65
TYP.
MIN.
Top view
1
Fig.1 SOT23.
Product specification
15
12
35
300
15
12
2
35
300
+150
175
MAX.
MAX.
3
MSB003
BFR93
2
V
V
mA
mW
pF
GHz
dB
dB
dB
V
V
V
mA
mW
C
C
UNIT
UNIT