BFR93 Philips Semiconductors (Acquired by NXP), BFR93 Datasheet - Page 3

• Manufacturer Part Number: BFR93
• Description: BFR93; NPN 5 GHZ Wideband Transistor;; Package: SOT23 (SST3)
• Manufacturer: Philips Semiconductors (Acquired by NXP)

Philips Semiconductors
THERMAL CHARACTERISTICS
Note
1. T
CHARACTERISTICS
T
Notes
1. G
2. Die mounted in a SOT37 package (BFR91).
3. I
1997 Oct 29
R
I
h
C
C
C
f
G
F
d
SYMBOL
SYMBOL
j
CBO
T
FE
im
th j-s
= 25 C unless otherwise specified.
c
e
re
NPN 5 GHz wideband transistor
UM
V
V
V
measured at f
C
s
p
q
r
UM
= 30 mA; V
= V
is the temperature at the soldering point of the collector pin.
= V
= V
is the maximum unilateral power gain, assuming S
O
O
O
= 300 mV at f
thermal resistance from junction to soldering point T
collector cut-off current
DC current gain
collector capacitance
emitter capacitance
feedback capacitance
transition frequency
maximum unilateral power gain
(note 1)
noise figure (note 2)
intermodulation distortion
6 dB at f
6 dB at f
CE
p
+ f
= 5 V; R
r
q
q
= 505.25 MHz;
PARAMETER
= 503.25 MHz;
f
p
r
= 493.25 MHz.
= 495.25 MHz;
L
= 75 ; VSWR
PARAMETER
2; T
I
I
I
I
I
T
I
I
T
I
Z
note 3
E
C
E
C
C
C
C
C
amb
amb
S
amb
= 0; V
= i
= 30 mA; V
= i
= 2 mA; V
= 30 mA; V
= 30 mA; V
= 2 mA; V
= opt.; T
e
c
= 25 C
= 25 C
= 25 C;
= 0; V
= 0; V
CB
3
12
= 10 V
CONDITIONS
amb
is zero and
CB
EB
CE
CE
CE
CE
CE
= 0.5 V; f = 1 MHz
= 10 V; f = 1 MHz
= 25 C
s
= 5 V; f = 1 MHz;
= 5 V; f = 500 MHz;
= 5 V
= 5 V; f = 500 MHz
= 5 V; f = 500 MHz;
CONDITIONS
95 C; note 1
G
UM
=
10 log
------------------------------------------------------------- - dB
40
MIN.
1
–
VALUE
260
S
11
90
0.7
1.8
0.8
5
16.5
1.9
TYP.
Product specification
60
S
2
21
1
2
–
50
MAX. UNIT
BFR93
S
22
UNIT
K/W
2
nA
pF
pF
pF
GHz
dB
dB
dB