BFR93AE6327 Infineon Technologies Corporation, BFR93AE6327 Datasheet - Page 2

• Manufacturer Part Number: BFR93AE6327
• Description: NPN Silicon RF Transistor
• Manufacturer: Infineon Technologies Corporation

Electrical Characteristics at T
Parameter
DC characteristics
Collector-emitter breakdown voltage
I
Collector-emitter cutoff current
V
Collector-base cutoff current
V
Emitter-base cutoff current
V
DC current gain
I
C
C
CE
CB
EB
= 1 mA, I
= 30 mA, V
= 2 V, I
= 20 V, V
= 10 V, I
B
C
E
= 0
CE
= 0
BE
= 0
= 8 V
= 0
A
= 25°C, unless otherwise specified.
2
Symbol
V
I
I
I
h
CES
CBO
EBO
FE
(BR)CEO
min.
12
50
-
-
-
Values
typ.
100
-
-
-
-
max.
Jun-27-2001
100
100
200
10
-
BFR93A
Unit
V
µA
nA
µA
-