BFR93AE6327 Infineon Technologies Corporation, BFR93AE6327 Datasheet - Page 6

• Manufacturer Part Number: BFR93AE6327
• Description: NPN Silicon RF Transistor
• Manufacturer: Infineon Technologies Corporation

Collector-base capacitance C
f = 1MHz
Power Gain G
f = 0.9GHz
V
CE
pF
dB
= Parameter
1.5
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
14
10
8
6
4
0
0
10
4
ma
, G
20
8
ms
= f(I
30
10V
12
C
)
40
cb
16
= f (V
mA
V
5V
3V
2V
1V
0.7V
V
I
C
CB
CB
60
22
)
6
Transition frequency f
Power Gain G
f = 1.8GHz
V
V
CE
CE
GHz
dB
= Parameter
6.0
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
= Parameter
9
7
6
5
4
3
2
1
0
0
10
10
ma
, G
20
20
ms
30
= f(I
30
T
10V
10V
= f (I
C
)
40
40
C
Jun-27-2001
)
BFR93A
mA
mA
2V
1V
0.7V
5V
3V
2V
1V
0.7V
I
I
C
C
60
60