STP10NM60ND STMicroelectronics, STP10NM60ND Datasheet - Page 3

• Manufacturer Part Number: STP10NM60ND
• Description: N-channel 600 V, 0.57 8 A, Dpak, To-220, To-220fp , Fdmeshtm Ii Power Mosfet
• Manufacturer: STMicroelectronics

STD10NM60ND, STF10NM60ND, STP10NM60ND
1
Electrical ratings
Table 2.
1. Limited only by maximum temperature allowed.
2. Pulse width limited by safe operating area.
3. I
Table 3.
Table 4.
Symbol
Symbol
R
Symbol
R
R
dv/dt
I
DM
P
thj-case
V
thj-amb
V
T
thj-pcb
E
SD
I
T
T
I
I
TOT
ISO
AS
GS
stg
D
D
AS
J
J
(2)
≤ 8 A, di/dt ≤ 400 A/µs, V
(3)
Gate- source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Peak diode recovery voltage slope
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1 s;T
Operating junction temperature
Storage temperature
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Thermal resistance junction-pcb max
Maximum lead temperature for soldering
purpose
Avalanche current, repetitive or not-
repetitive (pulse width limited by Tj Max)
Single pulse avalanche energy (starting
T
J
Absolute maximum ratings
Thermal data
Avalanche characteristics
=25 °C, I
C
=25 °C)
D
=I
AS
DS
Parameter
Parameter
Parameter
, V
peak ≤ V
DD
C
Doc ID 18467 Rev 1
=50 V)
= 25 °C
(BR)DSS
C
C
= 25 °C
= 100 °C
, V
DD
= 80% V
(BR)DSS
TO-220
TO-220
1.79
32
70
8
5
.
62.50
300
- 55 to 150
TO-220FP
TO-220FP
Value
Value
Value
± 25
130
32
2500
8
5
15
4
25
5
(1)
(1)
(1)
Electrical ratings
DPAK
DPAK
1.79
50
32
70
8
5
°C/W
°C/W
°C/W
°C/W
Unit
Unit
V/ns
Unit
mJ
°C
W
A
A
A
A
V
V
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