STP10NM60ND STMicroelectronics, STP10NM60ND Datasheet - Page 9

• Manufacturer Part Number: STP10NM60ND
• Description: N-channel 600 V, 0.57 8 A, Dpak, To-220, To-220fp , Fdmeshtm Ii Power Mosfet
• Manufacturer: STMicroelectronics

STD10NM60ND, STF10NM60ND, STP10NM60ND
3
Figure 18. Switching times test circuit for
Figure 20. Test circuit for inductive load
Figure 22. Unclamped inductive waveform
25 Ω
P
V
W
DD
G
V
D
S
GS
D.U.T.
A
B
resistive load
switching and diode recovery times
Test circuits
I
D
V
R
D
G
R
G
FAST
DIODE
B
A
I
DM
V
G
A
B
D
R
D.U.T.
L
S
D
L=100μH
V
2200
μF
(BR)DSS
3.3
μF
3.3
μF
Doc ID 18467 Rev 1
1000
μF
AM01472v1
AM01468v1
AM01470v1
V
DD
V
DD
V
DD
Figure 19. Gate charge test circuit
Figure 21. Unclamped inductive load test
Figure 23. Switching time waveform
V
P
i
V
W
0
0
i
=20V=V
P
w
10%
2200
μF
1kΩ
GMAX
td
circuit
on
I
90%
V
t
D
on
D
I
G
2.7kΩ
12V
t
=CONST
r
47kΩ
10%
V
GS
L
D.U.T.
V
47kΩ
100Ω
DS
2200
μF
100nF
90%
td
off
t
off
Test circuits
3.3
μF
D.U.T.
t
f
10%
AM01469v1
AM01471v1
AM01473v1
1kΩ
90%
V
V
V
9/19
G
DD
DD