2N4403RLRE ON Semiconductor, 2N4403RLRE Datasheet

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2N4403RLRE

Manufacturer Part Number
2N4403RLRE
Description
General Purpose Transistors, PNP Silicon , Package: TO-92 (TO-226), Pins=3
Manufacturer
ON Semiconductor
Datasheet
PNP Silicon
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
June, 2001 – Rev. 0
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
1. Pulse Test: Pulse Width
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ T A = 25 C
Total Device Dissipation @ T C = 25 C
Operating and Storage Junction
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Collector–Emitter Breakdown Voltage (1)
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Base Cutoff Current
Collector Cutoff Current
Semiconductor Components Industries, LLC, 2001
Derate above 25 C
Derate above 25 C
Temperature Range
(I C = 1.0 mAdc, I B = 0)
(I C = 0.1 mAdc, I E = 0)
(I E = 0.1 mAdc, I C = 0)
(V CE = 35 Vdc, V EB = 0.4 Vdc)
(V CE = 35 Vdc, V EB = 0.4 Vdc)
Characteristic
Rating
300 ms, Duty Cycle
t
Characteristic
(T A = 25 C unless otherwise noted)
2.0%.
Symbol
Symbol
T J , T stg
V CEO
V CBO
V EBO
R qJA
R qJC
P D
P D
I C
–55 to +150
1
Value
Max
83.3
600
625
200
5.0
5.0
1.5
40
40
12
mW/ C
mW/ C
mAdc
Unit
Watt
Unit
mW
Vdc
Vdc
Vdc
C/W
C/W
C
V (BR)EBO
V (BR)CEO
V (BR)CBO
Symbol
I CEX
I BEV
ON Semiconductor Preferred Device
CASE 29–11, STYLE 1
Min
TO–92 (TO–226AA)
5.0
40
40
1
Publication Order Number:
2
3
Max
0.1
0.1
2N4403/D
Unit
Vdc
Vdc
Vdc
Adc
Adc

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2N4403RLRE Summary of contents

Page 1

... Vdc 0.4 Vdc) Collector Cutoff Current ( Vdc 0.4 Vdc) 300 ms, Duty Cycle 1. Pulse Test: Pulse Width Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 June, 2001 – Rev. 0 Symbol Value ...

Page 2

ELECTRICAL CHARACTERISTICS ( unless otherwise noted) (Continued) Characteristic ON CHARACTERISTICS DC Current Gain ( 0.1 mAdc 1.0 Vdc 1.0 mAdc 1.0 Vdc ...

Page 3

TRANSIENT CHARACTERISTICS Figure 3. Capacitances Figure 5. Turn–On Time Figure 7. Storage Time http://onsemi.com 2N4403 Figure 4. Charge Data Figure 6. Rise Time 3 ...

Page 4

... Figure 8. Frequency Effects This group of graphs illustrates the relationship between h fe and other “h” parameters for this series of transistors. To obtain these curves, a high–gain and a low–gain unit were Figure 10. Current Gain Figure 12. Voltage Feedback Ratio 2N4403 SMALL–SIGNAL CHARACTERISTICS NOISE FIGURE – ...

Page 5

STATIC CHARACTERISTICS Figure 14. DC Current Gain Figure 15. Collector Saturation Region Figure 16. “On” Voltages http://onsemi.com 2N4403 q q Figure 17. Temperature Coefficients 5 ...

Page 6

PACKAGE DIMENSIONS SECTION X– 2N4403 TO–92 (TO–226) CASE 29–11 ISSUE AL J http://onsemi.com 6 ...

Page 7

Notes 2N4403 http://onsemi.com 7 ...

Page 8

... Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800–282–9855 Toll Free USA/Canada 2N4403 JAPAN: ON Semiconductor, Japan Customer Focus Center 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031 Phone: 81–3–5740–2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi ...

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