2N4403RLRE ON Semiconductor, 2N4403RLRE Datasheet - Page 2

• Manufacturer Part Number: 2N4403RLRE
• Description: General Purpose Transistors, PNP Silicon , Package: TO-92 (TO-226), Pins=3
• Manufacturer: ON Semiconductor

ELECTRICAL CHARACTERISTICS
ON CHARACTERISTICS
SMALL–SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
1. Pulse Test: Pulse Width
DC Current Gain
Collector–Emitter Saturation Voltage (1)
Base–Emitter Saturation Voltage (1)
Current–Gain — Bandwidth Product
Collector–Base Capacitance (V CB = 10 Vdc, I E = 0, f = 1.0 MHz)
Emitter–Base Capacitance (V EB = 0.5 Vdc, I C = 0, f = 1.0 MHz)
Input Impedance
Voltage Feedback Ratio (I C = 1.0 mAdc, V CE = 10 Vdc, f = 1.0 kHz)
Small–Signal Current Gain
Output Admittance (I C = 1.0 mAdc, V CE = 10 Vdc, f = 1.0 kHz)
Delay Time
Rise Time
Storage Time
Fall Time
(I C = 0.1 mAdc, V CE = 1.0 Vdc)
(I C = 1.0 mAdc, V CE = 1.0 Vdc)
(I C = 10 mAdc, V CE = 1.0 Vdc)
(I C = 150 mAdc, V CE = 2.0 Vdc) (1)
(I C = 500 mAdc, V CE = 2.0 Vdc) (1)
(I C = 150 mAdc, I B = 15 mAdc)
(I C = 500 mAdc, I B = 50 mAdc)
(I C = 150 mAdc, I B = 15 mAdc)
(I C = 500 mAdc, I B = 50 mAdc)
(I C = 20 mAdc, V CE = 10 Vdc, f = 100 MHz)
(I C = 1.0 mAdc, V CE = 10 Vdc, f = 1.0 kHz)
(I C = 1.0 mAdc, V CE = 10 Vdc, f = 1.0 kHz)
Figure 1. Turn–On Time
300 ms, Duty Cycle
(V CC = 30 Vdc, V BE = +2.0 Vdc,
(V CC
I C = 150 mAdc, I B1 = 15 mAdc)
(V CC = 30 Vdc, I C = 150 mAdc,
(V CC
I B1 = 15 mA, I B2 = 15 mA)
SWITCHING TIME EQUIVALENT TEST CIRCUIT
Characteristic
30 Vdc, V BE
30 Vdc, I C
(T A = 25 C unless otherwise noted) (Continued)
2.0%.
150 mAdc,
Scope rise time < 4.0 ns
*Total shunt capacitance of test jig connectors, and oscilloscope
+2.0 Vdc,
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2N4403
2
Figure 2. Turn–Off Time
V CE(sat)
V BE(sat)
Symbol
h FE
C cb
C eb
h oe
h re
h ie
h fe
f T
t d
t s
t r
t f
1.5 k
0.75
Min
100
100
200
0.1
1.0
30
60
20
60
—
—
—
—
—
—
—
—
—
Max
0.75
0.95
15 k
300
500
100
225
0.4
1.3
8.5
8.0
—
—
—
—
—
30
15
20
30
X 10 –4
ohms
MHz
Unit
mhos
Vdc
Vdc
pF
pF
—
—
ns
ns
ns
ns