LM2326 National Semiconductor, LM2326 Datasheet - Page 3

• Manufacturer Part Number: LM2326
• Description: PLLatinum Low Power Frequency Synthesizer for RF Personal Communications
• Manufacturer: National Semiconductor

I
I
f
f
f
Pf
P
V
V
I
I
I
I
ICP
ICP
ICP
ICP
ICP
ICP
ICP
CC
CC-PWDN
IN
osc
IH
IL
IH
IL
V
Electrical Characteristics
osc
IH
IL
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Power Supply Voltage
Voltage on Any Pin
Storage Temperature Range (T
Lead Temperature (T
Symbol
IN
CC
o-source
o-sink
o-source
o-sink
o-Tri
o-sink vs
o-source
V
V
V
with GND = 0V (V
(solder, 4 sec.)
CC1
CC2
p
= 3.0V, V
Power Supply Current
Powerdown Current
RF Input Operating
Frequency
Maximum Oscillator Frequency
Maximum Phase Detector Frequency
RF Input Sensitivity
Oscillator Sensitivity
High-Level Input Voltage
Low-Level Input Voltage
High-Level Input Current
Low-Level Input Current
Oscillator Input Current
Oscillator Input Current
Charge Pump Output Current
Charge Pump TRI-STATE Current
CP Sink vs Source Mismatch
p
= 3.0V; −40˚C
I
)
L
)
Parameter
<
S
)
T
A
<
85˚C except as specified
−0.3V to V
LMX2306
LMX2316
LMX2326
LMX2306
LMX2316
LMX2326
−65˚C to +150˚C
−0.3V to +6.5V
−0.3V to +6.5V
−0.3V to +6.5V
(Note 1)
CC
+260˚C
+ 0.3V
V
V
V
V
V
V
V
OSC
(Note 4)
(Note 4)
V
V
(Note 4)
V
V
V
(Note 3)
V
(Note 3)
V
(Note 3)
V
(Note 3)
0.5
−40˚C
V
T
CC
CC
CC
CC
CC
CC
CC
IH
IL
IH
IL
Do
Do
Do
CPo
CPo
A
= 25˚C
= 0V, V
= 0V, V
= V
= V
= V
= V
= V
= 2.3V to 5.5 V
= 2.3V to 5.5V
= 2.3V to 5.5V
= 3.0V
= 3.0V
= 5.0V
=2.3V to 5.5V
IN
3
V
V
V
V
= V
V
= V
CC
CC
CC
CC
<
CPo
CC
CC
p
p
p
Recommended Operating
Conditions
Power Supply Voltage
Operating Temperature (T
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to
the device may occur. Recommended operating conditions indicate condi-
tions for which the device is intended to be functional, but do not guarantee
specific performance limits. For guaranteed specifications and test condi-
tions, see the Electrical Characteristics. The guaranteed specifications apply
only for the test conditions listed.
Note 2: This device is a high performance RF integrated circuit with an ESD
rating
should only be done at ESD protected work stations.
Conditions
/2, ICP
/2, ICP
/2, ICP
p
T
p
= 2.3V to 5.5V
= 2.3V to 5.5V
= 2.3V to 5.5V
= 2.6V to 5.5V
/2, ICP
/2
A
V
V
V
= 5.5V (Note 4)
= 5.5V
CC
CC
CC1
CC2
p
<
V
<
= 5.5V
= 5.5V
p
85˚C
2 keV and is ESD sensitive. Handling and assembly of this device
o
o
o
− 0.5
o
= LOW
= LOW
= HIGH
= HIGH
0.8 x V
−100
A
−1.0
−1.0
−1.0
Min
−15
−10
−10
0.1
0.1
0.1
−5
)
25
5
CC
Values
−250
V
Min
V
−1.0
−40
Typ
2.3
250
1.7
2.5
4.0
1.0
CC1
CC
1
5
V
Max
0.2 x
+85
Max
V
5.5
5.5
550
100
1.2
2.1
2.8
1.0
1.0
1.0
CC1
40
10
+0
+0
+0
CC
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Units
Units
MHz
GHz
GHz
GHz
MHz
MHz
dBm
dBm
dBm
dBm
˚C
mA
mA
mA
mA
mA
V
V
V
µA
µA
µA
µA
µA
µA
µA
nA
%
V
V