LM2326 National Semiconductor, LM2326 Datasheet - Page 5

• Manufacturer Part Number: LM2326
• Description: PLLatinum Low Power Frequency Synthesizer for RF Personal Communications
• Manufacturer: National Semiconductor

I1 = CP sink current at V
I2 = CP sink current at V
I3 = CP sink current at V
1.
2.
3.
V = Voltage offset from positive and negative rails. Dependent on VCO tuning range relative to V
Charge Pump Current Specification Definitions
are between 0.5V and 1.0V
ICP
[
ICP
[|I2| − |I5|]/[
ICP
[|I2
1
⁄
2
*
o
o-sink
o
@
vs V
{ |I1| − |I3|}]/[
vs T = Charge Pump Output Current magnitude variation vs Temperature =
temp| − |I2
vs ICP
CPo
1
⁄
2
= Charge Pump Output Current magnitude variation vs Voltage =
*
o–source
{|I2| + |I5|}]
@
CPo
CPo
CPo
1
⁄
2
25˚C|]/|I2
*
= V
= V
= V
{|I1| + |I3|}]
= Charge Pump Output Current Sink vs Source Mismatch =
p
p
– V
/2
*
100%
@
25˚C|
*
100% and [
*
100% and [|I5
1
⁄
2
*
{|I4| − |I6|}]/[
@
5
temp| − |I5
I4 = CP source current at V
I5 = CP source current at V
I6 = CP source current at V
1
⁄
2
*
@
{|I4| + |I6|}]
25˚C|]/|I5
*
@
100%
25˚C|
CPo
CPo
CPo
CC
*
100%
= V
= V
= V
and ground. Typical values
p
p
/2
– V
DS100127-3
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