SI7212DN Vishay Intertechnology, SI7212DN Datasheet
SI7212DN
Manufacturer Part Number
SI7212DN
Description
Dual N-channel 30-V (d-s) Mosfet
Manufacturer
Vishay Intertechnology
Datasheet
1.SI7212DN.pdf
(6 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7212DN-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI7212DN-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes
a.
b.
c.
Document Number: 73128
S-51128—Rev. B, 13-Jun-05
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
See Solder Profile (http://www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequate bottom side solder interconnection.
Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
i
DS
30
30
(V)
J
ti
Ordering Information: Si7212DN-T1—E3 (Lead (Pb)-Free)
8
t A bi
0.039 @ V
0.036 @ V
D1
3.30 mm
r
7
DS(on)
D1
J
J
a
a
= 150_C)
= 150_C)
t
6
PowerPAKr 1212-8
a
a
GS
GS
D2
Parameter
Parameter
(W)
= 4.5 V
= 10 V
5
Bottom View
Dual N-Channel 30-V (D-S) MOSFET
D2
a
a
1
S1
a
b,c
2
I
D
G1
6.8
6.6
(A)
3
S2
3.30 mm
4
A
G2
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
Q
T
T
T
T
t v 10 sec
A
A
A
A
g
= 25_C
= 85_C
= 25_C
= 85_C
(Typ)
7
7
Symbol
Symbol
T
R
R
R
V
V
J
I
P
P
, T
DM
thJC
I
I
I
thJA
DS
GS
D
D
S
D
D
stg
G
1
FEATURES
D TrenchFETr Gen II Power MOSFET
D 100% R
D Space Savings Optimized for Fast
APPLICATIONS
D Synchronous Rectification
D Intermediate Driver
N-Channel MOSFET
Switching
10 secs
Typical
6.8
4.9
2.2
2.6
1.4
4.3
38
77
D
S
1
1
g
Tested
−55 to 150
"12
260
30
20
G
Steady State
2
Maximum
Vishay Siliconix
N-Channel MOSFET
0.69
4.9
3.5
1.1
1.3
5.4
48
94
D
S
Si7212DN
2
2
www.vishay.com
Unit
Unit
_C/W
C/W
_C
_C
RoHS
W
W
COMPLIANT
V
V
A
A
1
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