SI7212DN Vishay Intertechnology, SI7212DN Datasheet - Page 3

• Manufacturer Part Number: SI7212DN
• Description: Dual N-channel 30-V (d-s) Mosfet
• Manufacturer: Vishay Intertechnology

Document Number: 73128
S-51128—Rev. B, 13-Jun-05
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.05
0.04
0.03
0.02
0.01
0.00
10
20
10
8
6
4
2
0
1
0.0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
0.2
= 6.8 A
On-Resistance vs. Drain Current
V
= 15 V
GS
4
3
V
SD
= 4.5 V
Q
0.4
g
− Source-to-Drain Voltage (V)
I
D
− Total Gate Charge (nC)
− Drain Current (A)
Gate Charge
8
6
T
0.6
J
= 150_C
0.8
V
12
9
GS
= 10 V
1.0
T
J
= 25_C
16
12
1.2
1.4
20
15
1200
1000
0.10
0.08
0.06
0.04
0.02
0.00
800
600
400
200
1.6
1.4
1.2
1.0
0.8
0.6
0
−50
0
0
I
D
On-Resistance vs. Gate-to-Source Voltage
= 2 A
On-Resistance vs. Junction Temperature
V
I
−25
D
GS
= 6.8 A
C
5
= 10 V
oss
2
T
V
V
0
J
DS
GS
− Junction Temperature (_C)
I
D
− Gate-to-Source Voltage (V)
10
− Drain-to-Source Voltage (V)
= 6.8 A
25
Capacitance
C
4
iss
Vishay Siliconix
50
15
6
75
20
Si7212DN
100
C
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8
25
125
150
10
30
3