Si7464DP Vishay Intertechnology, Si7464DP Datasheet - Page 2

• Manufacturer Part Number: Si7464DP
• Description: N-channel 200-V (D-S) Fast Switching MOSFET
• Manufacturer: Vishay Intertechnology

Si7464DP
Vishay Siliconix
Notes
a.
b.
www.vishay.com
2
MOSFET SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate-Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
8
6
4
2
0
0
b
Parameter
V
a
a
DS
2
Output Characteristics
a
- Drain-to-Source Voltage (V)
V
GS
a
a
= 10 thru 5 V
4
Symbol
J
V
r
I
DS(on)
t
t
I
I
GS(th)
D(on)
V
Q
Q
d(on)
d(off)
6
GSS
DSS
Q
R
= 25_C UNLESS OTHERWISE NOTED)
g
t
t
SD
t
rr
fs
gs
gd
G
r
f
g
4 V
3 V
8
New Product
V
V
DS
I
DS
D
^ 1 A, V
= 100 V, V
I
= 160 V, V
F
V
V
V
V
V
V
V
V
DD
DD
DS
= 3.5 A, di/dt = 100 A/ms
V
I
DS
DS
DS
Test Condition
GS
S
DS
GS
= 3.5 A, V
= 0 V, V
= 100 V, R
= 100 V, R
= V
= 160 V, V
w 5 V, V
= 10 V, I
= 15 V, I
= 6 V, I
GEN
GS
GS
GS
, I
= 10 V, R
GS
= 10 V, I
D
= 0 V, T
D
D
GS
GS
D
= 250 mA
L
L
GS
= 2.7 A
= "20 V
= 2.8 A
= 2.8 A
= 100 W
= 100 W
= 10 V
= 0 V
= 0 V
J
D
G
= 55_C
= 2.8 A
= 6 W
8
6
4
2
0
0
1
V
GS
Transfer Characteristics
- Gate-to-Source Voltage (V)
Min
2
8
2
T
25_C
C
= 150_C
0.195
0.210
3
Typ
0.8
2.5
3.8
2.5
12
10
12
15
15
60
8
S-22097—Rev. A, 02-Dec-02
Document Number: 72052
4
"100
Max
0.24
0.26
1.2
18
15
20
25
25
90
4
1
5
-55 _C
5
Unit
nA
m
mA
nC
ns
W
W
W
V
A
S
V
6