Si7464DP Vishay Intertechnology, Si7464DP Datasheet - Page 3

• Manufacturer Part Number: Si7464DP
• Description: N-channel 200-V (D-S) Fast Switching MOSFET
• Manufacturer: Vishay Intertechnology

Document Number: 72052
S-22097—Rev. A, 02-Dec-02
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.4
0.3
0.2
0.1
0.0
10
0.1
10
8
6
4
2
0
1
0.0
0
0
V
I
D
Source-Drain Diode Forward Voltage
DS
On-Resistance vs. Drain Current
= 2.8 A
0.2
= 100 V
V
SD
2
3
Q
g
T
J
I
- Source-to-Drain Voltage (V)
D
- Total Gate Charge (nC)
= 150_C
V
- Drain Current (A)
Gate Charge
GS
0.4
= 6 V
4
6
0.6
V
GS
6
9
= 10 V
T
0.8
J
= 25_C
12
1.0
8
New Product
0.5
0.4
0.3
0.2
0.1
0.0
800
600
400
200
2.5
2.0
1.5
1.0
0.5
0.0
0
-50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
-25
V
I
D
GS
C
= 2.8 A
V
2
V
rss
GS
= 10 V
DS
T
20
J
0
- Gate-to-Source Voltage (V)
- Junction Temperature (_C)
- Drain-to-Source Voltage (V)
C
Capacitance
25
4
oss
C
iss
Vishay Siliconix
40
50
6
I
D
75
= 2.8 A
Si7464DP
100
60
www.vishay.com
8
125
10
150
80
3