SI7686DP Vishay Intertechnology, SI7686DP Datasheet - Page 3

• Manufacturer Part Number: SI7686DP
• Description: N-channel 30-V (d-s) Mosfet
• Manufacturer: Vishay Intertechnology

Document Number: 73451
S–51334—Rev. A, 25-Jul-05
0.0140
0.0120
0.0100
0.0080
0.0060
0.0040
50
40
30
20
10
On-Resistance vs. Drain Current and Gate Voltage
10
0
8
6
4
2
0
0.0
0
0
I
D
V
= 13.8 A
0.4
GS
10
V
4
DS
= 4.5 V
Q
Output Characteristics
g
– Drain-to-Source Voltage (V)
I
D
– Total Gate Charge (nC)
V
DS
– Drain Current (A)
Gate Charge
0.8
20
8
= 15 V
V
GS
V
1.2
30
12
GS
V
= 10 thru 4 V
DS
= 10 V
= 21 V
1.6
40
16
_
3 V
2.0
50
20
New Product
1500
1200
900
600
300
1.8
1.6
1.4
1.2
1.0
0.8
0.6
10
8
6
4
2
0
0
–50
0.0
0
On-Resistance vs. Junction Temperature
I
D
–25
C
= 13.8 A
0.5
rss
5
V
V
DS
GS
T
Transfer Characteristics
J
C
0
1.0
– Junction Temperature (_C)
oss
– Drain-to-Source Voltage (V)
– Gate-to-Source Voltage (V)
10
Capacitance
25
1.5
Vishay Siliconix
T
15
50
C
V
= 125_C
GS
25_C
C
2.0
iss
= 10 V
75
Si7686DP
20
2.5
100
V
www.vishay.com
GS
= 4.5 V
25
3.0
125
–55_C
150
3.5
30
3