SI7686DP Vishay Intertechnology, SI7686DP Datasheet - Page 4

• Manufacturer Part Number: SI7686DP
• Description: N-channel 30-V (d-s) Mosfet
• Manufacturer: Vishay Intertechnology

www.vishay.com
4
Si7686DP
Vishay Siliconix
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
50
10
1
0.00
–50
–25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
– Source-to-Drain Voltage (V)
T
I
Threshold Voltage
T
D
J
0.4
J
= 150_C
= 250 mA
– Temperature (_C)
25
0.6
50
75
*Limited by r
0.8
T
100
J
= 25_C
0.001
1.0
0.01
_
100
DS(on)
0.1
125
10
1
0.1
Safe Operating Area, Junction-to-Ambient
*V
1.2
150
GS
New Product
Single Pulse
T
u minimum V
A
V
= 25_C
DS
– Drain-to-Source Voltage (V)
1
GS
at which r
0.030
0.025
0.020
0.015
0.010
0.005
10
DS(on)
50
40
30
20
10
0
0.01
3
is specified
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
4
1 ms
10 ms
100 ms
1 s
10 s
dc
0.1
V
GS
100
5
T
– Gate-to-Source Voltage (V)
J
= 25_C
Time (sec)
1
6
S–51334—Rev. A, 25-Jul-05
7
Document Number: 73451
10
T
J
= 125_C
I
8
D
= 13.8 A
100
9
600
10