SI7674DP Vaishali Semiconductor, SI7674DP Datasheet - Page 2

• Manufacturer Part Number: SI7674DP
• Description: N-channel 30-V (d-s) Mosfet
• Manufacturer: Vaishali Semiconductor

SPICE Device Model Si7674DP
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
2
Vishay Siliconix
www.vishay.com
SPECIFICATIONS (T
Static
Gate Threshold Voltage
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
b
Parameter
a
a
a
J
= 25°C UNLESS OTHERWISE NOTED)
a
Symbol
V
r
I
DS(on)
V
Q
Q
D(on)
GS(th)
Q
g
SD
fs
gs
gd
g
V
DS
= 15V, V
V
Test Condition
V
V
V
V
DS
DS
GS
GS
DS
= V
≥ 5V, V
= 4.5V, I
= 10V, I
= 15V, I
I
GS
GS
S
, I
= 5A
= 4.5V, I
D
GS
D
D
= 250µA
D
= 20A
= 20A
= 10V
= 20A
D
= 20A
Simulated
0.0027
0.0038
Data
1624
13.6
0.75
171
1.1
6.8
28
Measured
S-52522Rev. A, 12-Dec-05
0.0027
0.0038
Data
13.6
0.75
6.8
87
28
Document Number: 74143
Unit
nC
Ω
V
A
S
V