Si7884DP Vishay Intertechnology, Si7884DP Datasheet - Page 2

• Manufacturer Part Number: Si7884DP
• Description: N-channel 40-V (D-S) MOSFET
• Manufacturer: Vishay Intertechnology

Si7884DP
Vishay Siliconix
Notes
a.
b.
www.vishay.com
2
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
50
40
30
20
10
b
0
0
Parameter
a
a
1
V
V
GS
DS
a
Output Characteristics
= 10 thru 4 V
- Drain-to-Source Voltage (V)
2
a
a
J
= 25_C UNLESS OTHERWISE NOTED)
3
Symbol
V
r
r
4
I
DS(on)
DS(on)
t
t
I
I
I
GS(th)
D(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
DSS
Q
g
R
t
t
SD
t
rr
fs
gs
gd
r
f
g
g
5
3 V
2 V
6
V
V
I
D
DS
DS
^ 1 A, V
I
F
V
= 32 V, V
= 20 V, V
V
V
V
V
V
V
V
V
DS
= 2.8 A, di/dt = 100 A/ms
I
DS
DS
Test Condition
S
DS
DD
DD
GS
GS
DS
= 2.8 A, V
= 0 V, V
= V
w 5 V, V
= 32 V, V
= 20 V, R
= 20 V, R
= 10 V, I
= 4.5 V, I
= 15 V, I
GEN
GS
GS
GS
, I
= 10 V, R
GS
= 0 V, T
D
= 5 V, I
GS
D
GS
GS
D
= 250 mA
D
L
L
= "20 V
= 14 A
= 12 A
= 20 W
= 20 W
= 14 A
= 10 V
= 0 V
= 0 V
D
J
50
40
30
20
10
G
0
= 55_C
= 14 A
0.0
= 6 W
0.5
V
GS
1.0
Transfer Characteristics
- Gate-to-Source Voltage (V)
Min
1.0
0.2
50
1.5
T
25_C
C
= 125_C
2.0
0.0055
0.0075
Typ
0.75
18.5
7.5
0.8
50
15
10
50
20
30
6
S-32077—Rev. D, 13-Oct-03
Document Number: 71855
2.5
0.0095
3.0
"100
Max
0.007
100
3.0
1.1
28
30
20
40
60
-55_C
1
5
1
3.5
Unit
nA
mA
mA
nC
ns
W
W
W
V
A
S
V
4.0