Si7884DP Vishay Intertechnology, Si7884DP Datasheet - Page 3

• Manufacturer Part Number: Si7884DP
• Description: N-channel 40-V (D-S) MOSFET
• Manufacturer: Vishay Intertechnology

Document Number: 71855
S-32077—Rev. D, 13-Oct-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.010
0.008
0.006
0.004
0.002
0.000
10
50
10
8
6
4
2
0
1
0.0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
= 14 A
0.2
On-Resistance vs. Drain Current
= 20 V
10
7
V
SD
Q
g
T
- Source-to-Drain Voltage (V)
I
0.4
D
J
- Total Gate Charge (nC)
= 150_C
- Drain Current (A)
Gate Charge
20
14
0.6
30
21
0.8
V
T
V
GS
J
GS
= 25_C
40
28
= 4.5 V
1.0
= 10 V
1.2
50
35
0.020
0.016
0.012
0.008
0.004
0.000
3000
2500
2000
1500
1000
500
2.0
1.6
1.2
0.8
0.4
0.0
0
-50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
D
-25
GS
= 14 A
C
= 10 V
2
8
rss
T
V
V
0
J
DS
GS
- Junction Temperature (_C)
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
25
Capacitance
16
4
I
D
= 14 A
Vishay Siliconix
C
50
C
oss
iss
24
6
75
Si7884DP
100
32
www.vishay.com
8
125
150
10
40
3