Si7900AEDN Vishay Intertechnology, Si7900AEDN Datasheet - Page 2

• Manufacturer Part Number: Si7900AEDN
• Description: Dual N-channel 20-V (D-S) MOSFET, Common Drain
• Manufacturer: Vishay Intertechnology

Si7900AEDN
Vishay Siliconix
Notes
a.
b.
www.vishay.com
2
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate Body Leakage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
10
8
6
4
2
0
b
0
Parameter
Gate-Current vs. Gate-Source Voltage
3
a
a
V
GS
a
- Gate-to-Source Voltage (V)
6
a
J
= 25_C UNLESS OTHERWISE NOTED)
9
Symbol
12
V
r
I
DS(on)
DS(on)
t
t
I
I
I
I
GS(th)
V
D(on)
Q
Q
d(on)
d(off)
GSS
GSS
DSS
DSS
Q
g
SD
t
t
fs
gs
gd
r
f
g
15
18
New Product
V
V
I
DS
D
DS
^ 1 A, V
V
V
= 10 V, V
DS
DS
= 16 V, V
V
V
V
V
V
V
V
V
V
I
DS
Test Condition
DS
GS
S
DS
DD
DD
DS
= 0 V, V
GS
GS
= 0 V, V
= 2.9 A, V
= V
= 5 V, V
= 16 V, V
= 4.5 V, I
= 10 V, R
= 10 V, R
= 10 V, I
= 2.5 V, I
= 1.8 V, I
GEN
GS
GS
GS
GS
GS
, I
= 4.5 V, R
= 4.5 V, I
= 0 V, T
D
GS
10,000
D
GS
= "4.5 V
= "12 V
D
1,000
GS
= 250 mA
L
L
D
D
0.01
= 8.5 A
= 8.5 A
100
= 4.5 V
= 10 W
= 10 W
= 8 A
= 7 A
0.1
= 0 V
10
= 0 V
1
J
D
0
G
= 85_C
= 6.5 A
= 6 W
Gate Current vs. Gate-Source Voltage
T
J
= 150_C
3
V
GS
- Gate-to-Source Voltage (V)
Min
0.40
20
6
T
J
= 25_C
0.020
0.022
0.026
Typ
0.65
10.5
0.85
9
1.9
1.8
1.3
8.6
4.2
25
S-31418—Rev. A, 07-Jun-03
Document Number: 72287
12
Max
0.026
0.030
0.036
"10
1.25
"1
0.9
1.1
2.0
6.5
20
16
13
1
15
Unit
mA
mA
mA
mA
nC
ms
ms
V
A
W
S
V