Si7900AEDN Vishay Intertechnology, Si7900AEDN Datasheet - Page 3

• Manufacturer Part Number: Si7900AEDN
• Description: Dual N-channel 20-V (D-S) MOSFET, Common Drain
• Manufacturer: Vishay Intertechnology

Document Number: 72287
S-31418—Rev. A, 07-Jun-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.06
0.05
0.04
0.03
0.02
0.01
1.6
1.4
1.2
1.0
0.8
0.6
30
25
20
15
10
5
0
- 50
0
0
On-Resistance vs. Junction Temperature
- 25
V
I
D
GS
= 8.5 A
On-Resistance vs. Drain Current
5
V
= 4.5 V
1
V
GS
T
DS
V
J
0
GS
= 5 thru 2 V
Output Characteristics
- Junction Temperature (_C)
- Drain-to-Source Voltage (V)
I
= 1.8 V
10
D
25
- Drain Current (A)
2
50
15
3
75
20
100
V
V
GS
GS
1.5 V
4
25
= 2.5 V
= 4.5 V
125
150
30
5
New Product
0.1
30
25
20
15
10
20
10
5
0
5
4
3
2
1
0
1
0.0
0
0
V
I
D
Source-Drain Diode Forward Voltage
DS
T
= 6.5 A
2
J
V
0.5
V
0.3
= 10 V
= 150_C
SD
GS
Transfer Characteristics
Q
- Source-to-Drain Voltage (V)
g
- Gate-to-Source Voltage (V)
- Total Gate Charge (nC)
4
Gate Charge
1.0
0.6
T
C
25_C
= - 55_C
6
Vishay Siliconix
Si7900AEDN
1.5
0.9
T
J
= 25_C
8
125_C
2.0
1.2
10
www.vishay.com
1.5
2.5
12
3