Si7941DP Vishay Intertechnology, Si7941DP Datasheet - Page 2

• Manufacturer Part Number: Si7941DP
• Description: Dual P-channel 30-V (D-S) MOSFET
• Manufacturer: Vishay Intertechnology

Si7941DP
Vishay Siliconix
Notes
a.
b.
www.vishay.com
2
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
30
24
18
12
6
0
0
b
Parameter
V
2
V
GS
a
a
DS
= 10 thru 5 V
Output Characteristics
a
– Drain-to-Source Voltage (V)
4
a
4 V
3 V
2 V
6
_
Symbol
V
r
I
DS(on)
t
I
t
I
GS(th)
D(on)
V
Q
Q
d(off)
d(on)
GSS
DSS
R
g
Q
t
SD
t
t
8
rr
fs
gs
gd
r
G
f
g
_
10
New Product
V
I
V
D
DS
DS
^ –1 A, V
= –15 V, V
I
F
= –24 V, V
V
V
V
V
V
V
V
V
= –2.9 A, di/dt = 100 A/ms
V
I
DS
DS
DS
S
DS
DD
DD
Test Condition
GS
GS
DS
= –2.9 A, V
= V
= –5 V, V
= –15 V, I
= –24 V, V
= –15 V, R
= –15 V, R
= –10 V, I
= –4.5 V, I
= 0 V, V
GEN
GS
GS
GS
, I
= –10 V, R
D
= –10 V, I
= 0 V, T
GS
GS
D
= –250 mA
GS
GS
D
D
L
L
= –2.5 A
= "20 V
= –10 V
= 15 W
= 15 W
= –9 A
= –5 A
= 0 V
= 0 V
J
30
24
18
12
D
G
= 70_C
6
0
= –9 A
= 6 W
0
1
V
GS
Transfer Characteristics
Min
–1.0
–30
– Gate-to-Source Voltage (V)
25_C
T
C
2
= 125_C
0.022
0.032
Typ
–0.8
8.5
7.5
2.9
14
42
18
29
65
27
50
S-03967—Rev. A, 04-Jun-01
3
Document Number: 71630
–55_C
"100
Max
0.027
0.039
–1.2
–10
100
–1
51
30
45
41
90
4
Unit
nA
m
mA
nC
ns
V
A
W
W
S
V
W
5