Si7941DP Vishay Intertechnology, Si7941DP Datasheet - Page 3

• Manufacturer Part Number: Si7941DP
• Description: Dual P-channel 30-V (D-S) MOSFET
• Manufacturer: Vishay Intertechnology

Document Number: 71630
S-03967—Rev. A, 04-Jun-01
0.075
0.060
0.045
0.030
0.015
0.000
10
20
10
8
6
4
2
0
1
0.0
0
0
V
I
V
D
DS
GS
Source-Drain Diode Forward Voltage
= 9 A
0.2
On-Resistance vs. Drain Current
= 15 V
= 4.5 V
6
8
V
SD
Q
g
– Source-to-Drain Voltage (V)
I
0.4
– Total Gate Charge (nC)
D
– Drain Current (A)
Gate Charge
12
16
T
J
= 150_C
0.6
18
24
0.8
V
GS
T
24
32
J
= 10 V
= 25_C
1.0
_
1.2
30
40
New Product
3500
2800
2100
1400
0.12
0.09
0.06
0.03
0.00
700
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0
–50
0
0
C
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
rss
V
I
–25
D
GS
= 9 A
= 10 V
2
6
T
V
V
0
C
J
GS
DS
– Junction Temperature (_C)
oss
– Gate-to-Source Voltage (V)
– Drain-to-Source Voltage (V)
25
Capacitance
12
4
I
D
Vishay Siliconix
C
50
= 9 A
iss
18
6
75
Si7941DP
100
24
www.vishay.com
8
125
150
10
30
3