HSM123 Renesas, HSM123 Datasheet - Page 4

• Manufacturer Part Number: HSM123
• Description: Silicon Epitaxial Planar Diode For High Speed Switching
• Manufacturer: Renesas

HSM123
Absolute Maximum Ratings *
(Ta = 25°C)
Item
Peak reverse voltage
Reverse voltage
Peak forward current
Non-Repetitive peak forward surge current
Average forward current
Junction temperature
Storage temperature
Notes: 1. Per one device.
Electrical Characteristics *
(Ta = 25°C)
Item
Forward voltage
Reverse current
Capacitance
Reverse recovery time
Note: Per one device.
Rev.6, Nov. 2002, page 2 of 2
2. Within 1 µs forward surge current.
Symbol
V
V
V
I
C
t
R
rr
F1
F2
F3
1
Min
—
—
—
—
—
—
Symbol
V
V
I
I
I
Tj
Tstg
FM
FSM
O
Typ
1.0
0.70
0.79
0.85
—
—
RM
R
*
2
Max
1.0
1.0
1.2
0.1
4.0
3.0
Unit
V
µA
pF
ns
Value
85
80
300
4
100
125
–55 to +125
Test Condition
I
I
I
V
V
I
F
F
F
F
R
R
= 10 mA
= 50 mA
= 100 mA
= 10 mA, V
= 80 V
= 0 V, f = 1 MHz
R
= 6 V, R
Unit
V
V
mA
A
mA
°C
°C
L
= 50 Ω