HSM276S Renesas, HSM276S Datasheet - Page 4

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HSM276S

Manufacturer Part Number
HSM276S
Description
Silicon Schottky Barrier Diode For Balanced Mixer
Manufacturer
Renesas
Datasheet

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HSM276S
Absolute Maximum Ratings
(Ta = 25°C)
Item
Reverse voltage
Average rectified current
Junction temperature
Storage temperature
Note:
Electrical Characteristics *
(Ta = 25°C)
Item
Reverse voltage
Reverse current
Forward current
Capacitance
Capacitance deviation
ESD-Capability *
Notes: 1. Per one device
Rev.6, Apr. 2002, page 2 of 2
1. Per one device
2. Failure criterion ; I
2
Symbol
V
I
Tj
Tstg
O
R
Symbol Min
V
I
I
C
∆C
*
R
F
R
1
R
≥ 100 µA at V
1
3.0
35
30
R
Typ
= 0.5 V
Max
50
0.90 pF
0.10 pF
Value
3
30
125
−55 to +125
Unit Test Condition
V
µA
mA
V
I
V
V
V
V
C = 200 pF, R = 0 Ω , Both forward and
reverse direction 1 Pulse.
R
R
F
R
R
= 1 mA
= 0.5 V
= 0.5 V
= 0.5 V, f = 1 MHz
= 0.5 V, f = 1 MHz
Unit
V
mA
°C
°C

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