HY27UF161G2M Hynix Semiconductor, HY27UF161G2M Datasheet - Page 20

• Manufacturer Part Number: HY27UF161G2M
• Description: 1gbit (128mx8bit / 64mx16bit) NAND Flash Memory
• Manufacturer: Hynix Semiconductor

Rev 0.7 / Apr. 2005
Input / Output Capacitance (1)
Input Capacitance(1)
Note: 1. For the stacked devices version the Input Capacitance is <TBD> and the I/O capacitance is <TBD>
Program Time
Dummy Busy Time for Cache Program
Number of partial Program Cycles in the same page
Block Erase Time
Item
Table 12: Program / Erase Characteristics
Table 11: Pin Capacitance (TA=25C, F=1.0MHz)
Parameter
Symbol
C
C
I/O
IN
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
Spare Array
Main Array
Test Condition
V
V
IN
IL
=0V
=0V
Symbol
HY27UF(08/16)1G2M Series
HY27SF(08/16)1G2M Series
t
t
t
NOP
NOP
PROG
CBSY
BERS
Min
Min
-
-
-
-
-
-
-
Typ
300
3
2
-
-
Max
10
10
Preliminary
Max
700
700
4
4
3
Unit
Cycles
Cycles
pF
pF
Unit
ms
us
us
20