SUP75P03-08 Vishay Intertechnology, SUP75P03-08 Datasheet - Page 2

• Manufacturer Part Number: SUP75P03-08
• Description: P-channel Enhancement-mode Transistors
• Manufacturer: Vishay Intertechnology

SUP/SUB75P03-08
Vishay Siliconix
Notes:
a.
b.
c.
www.vishay.com
2
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reversen Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Diode Ratings and Characteristics (T
Continuous Current
Pulsed Current
Forward Voltage
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
Guaranteed by design, not subject to production testing.
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Independent of operating temperature.
c
c
b
Parameter
a
c
c
c
c
c
a
a
a
_
Symbol
V
I
V
RM(REC)
r
(BR)DSS
I
DS(on)
DS(on)
t
t
I
I
C
GS(th)
C
V
D(on)
C
Q
Q
d(on)
d(off)
GSS
I
DSS
DSS
Q
Q
g
SM
t
oss
t
I
t
SD
iss
rss
rr
fs
gs
gd
s
r
f
rr
g
C
I
V
V
D
D
V
= 25_C)
V
V
GS
DS
DS
GS
V
DS
DS
] –75 A, V
GS
= –15 V, V
= –10 V, I
= –30 V, V
= –30 V, V
= –10 V, I
I
F
F
V
V
V
V
= 0 V, V
V
V
V
V
V
DS
DS
= –75 A, di/dt = 100 A/ms
DD
DD
DS
GS
I
GS
DS
DS
Test Condition
F
= –75 A, V
b
= V
= –5 V, V
= –15 V, R
= –15 V, R
= 0 V, V
= –10 V, I
= 0 V, I
= –30 V, V
= –15 V, I
GEN
GEN
GS
DS
D
GS
GS
D
GS
GS
= –30 A, T
, I
= –30 A, T
= –25 V, f = 1 MHz
= –10 V, I
= –10 V, R
D
GS
D
= 0 V, T
= 0 V, T
GS
= –250 mA
D
GS
= –250 mA
D
GS
L
L
= "20 V
= –30 A
= –10 V
= –30 A
= 0.2 W
= 0.2 W
= 0 V
= 0 V
J
J
J
J
D
D
G
G
= 125_C
= 175_C
= 175_C
= 125_C
m
= –75 A
= 2.5 W
Min
–120
–30
–1
30
S-05111—Rev. D, 10-Dec-99
0.008
Typ
6900
1850
–1.1
570
115
140
2.5
30
10
10
16
80
60
Document Number: 70772
Max
"100
0.008
0.012
0.015
0.016
–150
–200
–1.4
–50
140
200
140
–75
100
–3
–1
20
30
5
Unit
nA
mA
m
pF
nC
mC
ns
ns
W
V
A
S
A
V
A