XR1002-BD Mimix Broadband, XR1002-BD Datasheet

XR1002-BD

Manufacturer Part Number

XR1002-BD

Description

GaAs MMIC Receiver

Manufacturer

Mimix Broadband

Datasheet

1.XR1002-BD.pdf (10 pages)

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17.65-33.65 GHz GaAs MMIC

Receiver

Features

April 2007 - Rev 05-Apr-07

Mimix Broadband’s 17.65-33.65 GHz GaAs MMIC receiver has a 12.0 dB

gain control range, a noise figure of 3.0 dB and 25.0 dB image rejection

across the band. This device is a three stage LNA followed by a single

transistor "Tee" attenuator and an image reject fundamental resistive

HEMT mixer. At high signal levels the radio AGC system can be used to

reduce the receiver gain improving the IIP3 providing for minimum

distortion at modulation schemes as high as 256 QAM (ETSI-see

Technical Note 1). The image reject mixer eliminates the need for a

bandpass filter after the LNA to remove thermal noise at the image

frequency. I and Q mixer outputs are provided and an external 90 degree

hybrid is required to select the desired sideband. This MMIC uses Mimix

Broadband’s 0.15 µm GaAs PHEMT device model technology, and is

based upon electron beam lithography to ensure high repeatability and

uniformity. The chip has surface passivation to protect and provide a

rugged part with backside via holes and gold metallization to allow

either a conductive epoxy or eutectic solder die attach process. This

device is well suited for Millimeter-wave Point-to-Point Radio, LMDS,

SATCOM and VSAT applications.

General Description

Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept

Fundamental High Dynamic Range Receiver

Integrated Gain Control

+4.0 dBm Input Third Order Intercept (IIP3)

13.0 dB Conversion Gain

3.0 dB Noise Figure

25.0 dB Image Rejection

100% On-Wafer RF, DC and Noise Figure Testing

100% Visual Inspection to MIL-STD-883 Method 2010

Electrical Characteristics (Ambient Temperature T = 25

Frequency Range (RF) Upper Side Band

Frequency Range (RF) Lower Side Band

Frequency Range (LO)

Frequency Range (IF)

Input Return Loss RF (S11)

Small Signal Conversion Gain RF/IF (S21)

Attenuation

LO Input Drive (P

Image Rejection

Noise Figure (NF)

Isolation LO/RF

Input Third Order Intercept (IIP3)

Drain Bias Voltage (Vd1,2)

Gate Bias Voltage (Vg1,2) (Vg4=-0.8V)

Control Bias Voltage (Vg3)

Supply Current (Id) (Vd=4.5V, Vg=-0.5V Typical)

Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099

)

Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com

Parameter

their obligation to be compliant with U.S. Export Laws.

Chip Device Layout

Absolute Maximum Ratings

(1) Measured using constant current, 10dB attenuation and

-20dBm total input power.

(2) At minimum attenuation.

(3) Channel temperature affects a device's MTTF. It is

recommended to keep channel temperature as low as

possible for maximum life.

Supply Voltage (Vd)

Supply Current (Id)

Gate Bias Voltage (Vg)

Input Power (RF Pin)

Storage Temperature (Tstg)

Operating Temperature (Ta)

Channel Temperature (Tch)

Units

dBm

GHZ

VDC

GHz

dBc

17.65

13.65

+12.0

Min.

15.0

-1.0

-1.5

9.5

0.0

+15.0

Typ.

10.0

13.0

25.0

40.0

+4.0

+4.5

-0.5

-1.2

135

3.0

+6.0 VDC

300 mA

+0.3 VDC

-65 to +165

-55 to MTTF Table

MTTF Table

0.0 dBm

33.65

37.65

+18.0

Max.

+5.5

R1002

12.0

270

R1002-BD

4.0

3.7

0.0

Page 1 of 10

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